Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission

V. A. Greanya, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The valence band dispersions for Bi2Se3 were determined using angle resolved photoelectron spectroscopy. The valence band maximum was found to be located at the γ point and was nondegenerate. The low k-space degeneracy of the valence band maximum (VBM) and the lesser degree of the anisotropy accounted for these materials poor thermoelectric properties as compared to that of Bi2Te3.

Original languageEnglish
Pages (from-to)6658-6661
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number11
DOIs
Publication statusPublished - Dec 1 2002

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photoelectric emission
valence
thermoelectric materials
photoelectron spectroscopy
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission. / Greanya, V. A.; Tonjes, W. C.; Liu, Rong; Olson, C. G.; Chung, D. Y.; Kanatzidis, Mercouri G.

In: Journal of Applied Physics, Vol. 92, No. 11, 01.12.2002, p. 6658-6661.

Research output: Contribution to journalArticle

Greanya, V. A. ; Tonjes, W. C. ; Liu, Rong ; Olson, C. G. ; Chung, D. Y. ; Kanatzidis, Mercouri G. / Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 11. pp. 6658-6661.
@article{63d3fc24bc4042218c566504f8bd665c,
title = "Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission",
abstract = "The valence band dispersions for Bi2Se3 were determined using angle resolved photoelectron spectroscopy. The valence band maximum was found to be located at the γ point and was nondegenerate. The low k-space degeneracy of the valence band maximum (VBM) and the lesser degree of the anisotropy accounted for these materials poor thermoelectric properties as compared to that of Bi2Te3.",
author = "Greanya, {V. A.} and Tonjes, {W. C.} and Rong Liu and Olson, {C. G.} and Chung, {D. Y.} and Kanatzidis, {Mercouri G}",
year = "2002",
month = "12",
day = "1",
doi = "10.1063/1.1517748",
language = "English",
volume = "92",
pages = "6658--6661",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission

AU - Greanya, V. A.

AU - Tonjes, W. C.

AU - Liu, Rong

AU - Olson, C. G.

AU - Chung, D. Y.

AU - Kanatzidis, Mercouri G

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The valence band dispersions for Bi2Se3 were determined using angle resolved photoelectron spectroscopy. The valence band maximum was found to be located at the γ point and was nondegenerate. The low k-space degeneracy of the valence band maximum (VBM) and the lesser degree of the anisotropy accounted for these materials poor thermoelectric properties as compared to that of Bi2Te3.

AB - The valence band dispersions for Bi2Se3 were determined using angle resolved photoelectron spectroscopy. The valence band maximum was found to be located at the γ point and was nondegenerate. The low k-space degeneracy of the valence band maximum (VBM) and the lesser degree of the anisotropy accounted for these materials poor thermoelectric properties as compared to that of Bi2Te3.

UR - http://www.scopus.com/inward/record.url?scp=0036902120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036902120&partnerID=8YFLogxK

U2 - 10.1063/1.1517748

DO - 10.1063/1.1517748

M3 - Article

AN - SCOPUS:0036902120

VL - 92

SP - 6658

EP - 6661

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -