Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD

J. R. Babcock, A. Wang, N. L. Edleman, D. D. Benson, A. W. Metz, M. V. Metz, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

For the growth of thin zinc group metal oxide films [i.e. cadmium oxide (CdO), cadmium stannate (Cd2SnO4), and zinc oxide (ZnO)] via metal-organic chemical vapor deposition (MOCVD), volatile Cd and Zn precursor families are needed. Starting with Cd, β-ketoiminates of varying substitution were prepared to elucidate structure-property relationships. The nature of the ligand substituents strongly influences the melting point (liquid precursors are desired). Unlike conventional Cd β-diketonates, these complexes are monomeric as determined by x-ray crystallography. Despite these advantageous characteristics, attempts to grow CdO thin films in a cold-wall MOCVD reactor using two such derivatives were not successful. This class of Cd complex appears to decompose thermally with time-- a likely cause of the poor performance. Therefore, a new series of more thermally stable Cd precursors was sought. Using the chelating diamine N,N,N′,N′-tetramethylethylenediamine (TMEDA), monomeric β-diketonates were prepared. The molecular structure of Cd(hfa)2(TMEDA) (hfa = 1,1,1,5,5,5-hexafluoropentane-2,4-dionate) confirms the monomeric structural assignment. This series of Cd complexes is appreciably more volatile and sublime more cleanly than the aforementioned β-ketoiminates, as determined by vacuum thermogravimetric analysis (TGA). In addition to this advantageous characteristic, these complexes are easily prepared under ambient laboratory conditions from commercially available starting materials in a single step. Following the protocol established for Cd, a volatile series of Zn precursors was also prepared. For the Zn series, the melting point was effectively tuned through variation of both the β-diketonate and diamine ligands. The use of the Cd and Zn β-diketonate precursors in the successful growth of CdO and ZnO thin films, respectively, by MOCVD is also presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.S. Ginley, J.D. Perkins, H. Kawazoe, D.M. Newns, A.B. Kozyrev
Pages317-328
Number of pages12
Volume623
Publication statusPublished - 2000
EventMaterials Science of Novel Oxide-Based Electronics - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMaterials Science of Novel Oxide-Based Electronics
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

Fingerprint

Organic Chemicals
Organic chemicals
Cadmium
Oxide films
Chemical vapor deposition
Metals
Zinc Oxide
Thin films
Diamines
Zinc oxide
Melting point
Ligands
Oxides
Crystallography
Chelation
Molecular structure
Thermogravimetric analysis
Zinc
Substitution reactions
Vacuum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Babcock, J. R., Wang, A., Edleman, N. L., Benson, D. D., Metz, A. W., Metz, M. V., & Marks, T. J. (2000). Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD. In D. S. Ginley, J. D. Perkins, H. Kawazoe, D. M. Newns, & A. B. Kozyrev (Eds.), Materials Research Society Symposium - Proceedings (Vol. 623, pp. 317-328)

Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD. / Babcock, J. R.; Wang, A.; Edleman, N. L.; Benson, D. D.; Metz, A. W.; Metz, M. V.; Marks, Tobin J.

Materials Research Society Symposium - Proceedings. ed. / D.S. Ginley; J.D. Perkins; H. Kawazoe; D.M. Newns; A.B. Kozyrev. Vol. 623 2000. p. 317-328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Babcock, JR, Wang, A, Edleman, NL, Benson, DD, Metz, AW, Metz, MV & Marks, TJ 2000, Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD. in DS Ginley, JD Perkins, H Kawazoe, DM Newns & AB Kozyrev (eds), Materials Research Society Symposium - Proceedings. vol. 623, pp. 317-328, Materials Science of Novel Oxide-Based Electronics, San Francisco, CA, United States, 4/24/00.
Babcock JR, Wang A, Edleman NL, Benson DD, Metz AW, Metz MV et al. Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD. In Ginley DS, Perkins JD, Kawazoe H, Newns DM, Kozyrev AB, editors, Materials Research Society Symposium - Proceedings. Vol. 623. 2000. p. 317-328
Babcock, J. R. ; Wang, A. ; Edleman, N. L. ; Benson, D. D. ; Metz, A. W. ; Metz, M. V. ; Marks, Tobin J. / Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD. Materials Research Society Symposium - Proceedings. editor / D.S. Ginley ; J.D. Perkins ; H. Kawazoe ; D.M. Newns ; A.B. Kozyrev. Vol. 623 2000. pp. 317-328
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