Diamond nucleation on surfaces using carbon clusters

R. J. Meilunas, Robert P. H. Chang

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Abstract

Thin solid films of C60 and C70 have been used as nucleating layers for the growth of diamond thin films on a variety of substrate surfaces, including metal, insulator, and semiconductors. Compared to other forms of carbon, such as graphite, amorphous carbon, soot, etc., it is found that the nucleation density on a C70 film is equivalent to that of diamond seeds themselves. On the other hand, diamond nucleation on a C60 film is less favorable. We argue from our experiments that the reason for C70 film to have such favorable nucleating properties is its chemical stability and geometry. A working model is proposed to explain the nucleation of diamond on solid C70 films. Application of this work extending to the growth of diamond on a wide range of substrates is also discussed.

Original languageEnglish
Pages (from-to)61-79
Number of pages19
JournalJournal of Materials Research
Volume9
Issue number1
Publication statusPublished - Jan 1994

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ASJC Scopus subject areas

  • Materials Science(all)

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