Dielectric properties of epitaxial KNbO3 ferroelectric thin films

Soma Chattopadhyay, B. M. Nichols, Jin Ha Hwang, Thomas O Mason, B. W. Wessels

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The dielectric response of KNbO3 epitaxial ferroelectric thin films was measured as a function of bias, frequency, and temperature. Thin films with a thickness of 80 to 350 nm were deposited on spinel substrates by low-pressure metalorganic chemical vapor deposition. Bias dependence measurements showed hysteresis in the dielectric response. The dielectric constant decreased with bias, and the tunability was calculated to be between 35% and 42% for an applied field of 7 MV/cm. The frequency dependence of the dielectric constant followed a power law. A pronounced thickness effect was observed in the dielectric response, especially at the Curie temperature. With decreasing thickness, the dielectric constant and the loss tangent decreased. A diffuse ferroelectric phase transition was observed for films with a thickness less than 350 nm.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalJournal of Materials Research
Volume17
Issue number2
Publication statusPublished - Feb 2002

Fingerprint

Ferroelectric thin films
Dielectric properties
dielectric properties
Permittivity
permittivity
thin films
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Curie temperature
Ferroelectric materials
Hysteresis
Phase transitions
tangents
spinel
metalorganic chemical vapor deposition
Thin films
low pressure
hysteresis
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chattopadhyay, S., Nichols, B. M., Hwang, J. H., Mason, T. O., & Wessels, B. W. (2002). Dielectric properties of epitaxial KNbO3 ferroelectric thin films. Journal of Materials Research, 17(2), 275-278.

Dielectric properties of epitaxial KNbO3 ferroelectric thin films. / Chattopadhyay, Soma; Nichols, B. M.; Hwang, Jin Ha; Mason, Thomas O; Wessels, B. W.

In: Journal of Materials Research, Vol. 17, No. 2, 02.2002, p. 275-278.

Research output: Contribution to journalArticle

Chattopadhyay, S, Nichols, BM, Hwang, JH, Mason, TO & Wessels, BW 2002, 'Dielectric properties of epitaxial KNbO3 ferroelectric thin films', Journal of Materials Research, vol. 17, no. 2, pp. 275-278.
Chattopadhyay S, Nichols BM, Hwang JH, Mason TO, Wessels BW. Dielectric properties of epitaxial KNbO3 ferroelectric thin films. Journal of Materials Research. 2002 Feb;17(2):275-278.
Chattopadhyay, Soma ; Nichols, B. M. ; Hwang, Jin Ha ; Mason, Thomas O ; Wessels, B. W. / Dielectric properties of epitaxial KNbO3 ferroelectric thin films. In: Journal of Materials Research. 2002 ; Vol. 17, No. 2. pp. 275-278.
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