Dielectric properties of epitaxial KNbO3 ferroelectric thin films

Soma Chattopadhyay, B. M. Nichols, Jin Ha Hwang, Thomas O Mason, B. W. Wessels

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The dielectric response of KNbO3 epitaxial ferroelectric thin films was measured as a function of bias, frequency, and temperature. Thin films with a thickness of 80 to 350 nm were deposited on spinel substrates by low-pressure metalorganic chemical vapor deposition. Bias dependence measurements showed hysteresis in the dielectric response. The dielectric constant decreased with bias, and the tunability was calculated to be between 35% and 42% for an applied field of 7 MV/cm. The frequency dependence of the dielectric constant followed a power law. A pronounced thickness effect was observed in the dielectric response, especially at the Curie temperature. With decreasing thickness, the dielectric constant and the loss tangent decreased. A diffuse ferroelectric phase transition was observed for films with a thickness less than 350 nm.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalJournal of Materials Research
Issue number2
Publication statusPublished - Feb 2002

ASJC Scopus subject areas

  • Materials Science(all)

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    Chattopadhyay, S., Nichols, B. M., Hwang, J. H., Mason, T. O., & Wessels, B. W. (2002). Dielectric properties of epitaxial KNbO3 ferroelectric thin films. Journal of Materials Research, 17(2), 275-278.