Differences between amorphous indium oxide thin films

D. Bruce Buchholz, Li Zeng, Michael J. Bedzyk, Robert P. H. Chang

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.

Original languageEnglish
Pages (from-to)475-480
Number of pages6
JournalProgress in Natural Science: Materials International
Volume23
Issue number5
DOIs
Publication statusPublished - Oct 1 2013

Fingerprint

Indium
Oxide films
Thin films
Electric properties
Temperature
Carrier mobility
Physical properties
Diffraction
indium oxide
Crystalline materials
X rays

Keywords

  • Amorphous
  • Deposition temperature
  • Oxide
  • Semiconductor
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Differences between amorphous indium oxide thin films. / Buchholz, D. Bruce; Zeng, Li; Bedzyk, Michael J.; Chang, Robert P. H.

In: Progress in Natural Science: Materials International, Vol. 23, No. 5, 01.10.2013, p. 475-480.

Research output: Contribution to journalArticle

Buchholz, D. Bruce ; Zeng, Li ; Bedzyk, Michael J. ; Chang, Robert P. H. / Differences between amorphous indium oxide thin films. In: Progress in Natural Science: Materials International. 2013 ; Vol. 23, No. 5. pp. 475-480.
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