TY - JOUR
T1 - Different regimes of Förster-type energy transfer between an epitaxial quantum well and a proximal monolayer of semiconductor nanocrystals
AU - Kos, Š
AU - Achermann, M.
AU - Klimov, V. I.
AU - Smith, D. L.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - We calculate the rate of nonradiative, Förster-type energy transfer (ET) from an excited epitaxial quantum well (QW) to a proximal monolayer of semiconductor nanocrystal quantum dots (QDs). Different electron-hole configurations in the QW are considered as a function of temperature and excited electron-hole density. A comparison of the theoretically determined ET rate and QW radiative recombination rate shows that, depending on the specific conditions, the ET rate is comparable to or even greater than the radiative recombination rate. Such efficient Förster ET is promising for the implementation of ET-pumped, nanocrystal QD-based light emitting devices.
AB - We calculate the rate of nonradiative, Förster-type energy transfer (ET) from an excited epitaxial quantum well (QW) to a proximal monolayer of semiconductor nanocrystal quantum dots (QDs). Different electron-hole configurations in the QW are considered as a function of temperature and excited electron-hole density. A comparison of the theoretically determined ET rate and QW radiative recombination rate shows that, depending on the specific conditions, the ET rate is comparable to or even greater than the radiative recombination rate. Such efficient Förster ET is promising for the implementation of ET-pumped, nanocrystal QD-based light emitting devices.
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U2 - 10.1103/PhysRevB.71.205309
DO - 10.1103/PhysRevB.71.205309
M3 - Article
AN - SCOPUS:28744446862
VL - 71
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 20
M1 - 205309
ER -