Diffuse phase transition in epitaxial BaTiO3 thin films

Soma Chattopadhyay, A. R. Teren, Jin Ha Hwang, Thomas O Mason, B. W. Wessels

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Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

Original languageEnglish
Pages (from-to)669-674
Number of pages6
JournalJournal of Materials Research
Volume17
Issue number3
Publication statusPublished - Mar 2002

ASJC Scopus subject areas

  • Materials Science(all)

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    Chattopadhyay, S., Teren, A. R., Hwang, J. H., Mason, T. O., & Wessels, B. W. (2002). Diffuse phase transition in epitaxial BaTiO3 thin films. Journal of Materials Research, 17(3), 669-674.