Diffuse phase transition in epitaxial BaTiO3 thin films

Soma Chattopadhyay, A. R. Teren, Jin Ha Hwang, Thomas O Mason, B. W. Wessels

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

Original languageEnglish
Pages (from-to)669-674
Number of pages6
JournalJournal of Materials Research
Volume17
Issue number3
Publication statusPublished - Mar 2002

Fingerprint

Epitaxial films
Phase transitions
Thin films
Film thickness
Permittivity
film thickness
thin films
permittivity
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
tangents
Dielectric properties
Superconducting transition temperature
Ferroelectric materials
metalorganic chemical vapor deposition
dielectric properties
low pressure
transition temperature
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chattopadhyay, S., Teren, A. R., Hwang, J. H., Mason, T. O., & Wessels, B. W. (2002). Diffuse phase transition in epitaxial BaTiO3 thin films. Journal of Materials Research, 17(3), 669-674.

Diffuse phase transition in epitaxial BaTiO3 thin films. / Chattopadhyay, Soma; Teren, A. R.; Hwang, Jin Ha; Mason, Thomas O; Wessels, B. W.

In: Journal of Materials Research, Vol. 17, No. 3, 03.2002, p. 669-674.

Research output: Contribution to journalArticle

Chattopadhyay, S, Teren, AR, Hwang, JH, Mason, TO & Wessels, BW 2002, 'Diffuse phase transition in epitaxial BaTiO3 thin films', Journal of Materials Research, vol. 17, no. 3, pp. 669-674.
Chattopadhyay S, Teren AR, Hwang JH, Mason TO, Wessels BW. Diffuse phase transition in epitaxial BaTiO3 thin films. Journal of Materials Research. 2002 Mar;17(3):669-674.
Chattopadhyay, Soma ; Teren, A. R. ; Hwang, Jin Ha ; Mason, Thomas O ; Wessels, B. W. / Diffuse phase transition in epitaxial BaTiO3 thin films. In: Journal of Materials Research. 2002 ; Vol. 17, No. 3. pp. 669-674.
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