Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)

Jangdae Youn, Sureshraju Vegiraju, Jonathan D. Emery, Benjamin J. Leever, Sumit Kewalramani, Silvia J. Lou, Shiming Zhang, Kumaresan Prabakaran, Yamuna Ezhumalai, Choongik Kim, Peng Yi Huang, Charlotte Stern, Wen Chung Chang, Michael J. Bedzyk, Lin X. Chen, Ming Chou Chen, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.

Original languageEnglish
Article number1500098
JournalAdvanced Electronic Materials
Volume1
Issue number8
DOIs
Publication statusPublished - 2015

Fingerprint

Thiophenes
Thiophene
Thin film transistors
Semiconductor materials
Surface treatment
Semiconductor growth
Gate dielectrics
Carrier mobility
Thermoanalysis
Molecular structure
Vapors
Single crystals
Derivatives
X ray diffraction
Degradation
Substrates

Keywords

  • dithienothiophenes (DTTs)
  • fused thiophenes
  • organic semiconductors
  • organic thin film transistors (OTFTs)
  • perfluorophenyl
  • tetrathienoacens (TTAs)
  • thienothiophenes (TTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs). / Youn, Jangdae; Vegiraju, Sureshraju; Emery, Jonathan D.; Leever, Benjamin J.; Kewalramani, Sumit; Lou, Silvia J.; Zhang, Shiming; Prabakaran, Kumaresan; Ezhumalai, Yamuna; Kim, Choongik; Huang, Peng Yi; Stern, Charlotte; Chang, Wen Chung; Bedzyk, Michael J.; Chen, Lin X.; Chen, Ming Chou; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Electronic Materials, Vol. 1, No. 8, 1500098, 2015.

Research output: Contribution to journalArticle

Youn, J, Vegiraju, S, Emery, JD, Leever, BJ, Kewalramani, S, Lou, SJ, Zhang, S, Prabakaran, K, Ezhumalai, Y, Kim, C, Huang, PY, Stern, C, Chang, WC, Bedzyk, MJ, Chen, LX, Chen, MC, Facchetti, A & Marks, TJ 2015, 'Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)', Advanced Electronic Materials, vol. 1, no. 8, 1500098. https://doi.org/10.1002/aelm.201500098
Youn, Jangdae ; Vegiraju, Sureshraju ; Emery, Jonathan D. ; Leever, Benjamin J. ; Kewalramani, Sumit ; Lou, Silvia J. ; Zhang, Shiming ; Prabakaran, Kumaresan ; Ezhumalai, Yamuna ; Kim, Choongik ; Huang, Peng Yi ; Stern, Charlotte ; Chang, Wen Chung ; Bedzyk, Michael J. ; Chen, Lin X. ; Chen, Ming Chou ; Facchetti, Antonio ; Marks, Tobin J. / Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs). In: Advanced Electronic Materials. 2015 ; Vol. 1, No. 8.
@article{e8d0ac65b239476dbb84dbbc6021b203,
title = "Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)",
abstract = "Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.",
keywords = "dithienothiophenes (DTTs), fused thiophenes, organic semiconductors, organic thin film transistors (OTFTs), perfluorophenyl, tetrathienoacens (TTAs), thienothiophenes (TTs)",
author = "Jangdae Youn and Sureshraju Vegiraju and Emery, {Jonathan D.} and Leever, {Benjamin J.} and Sumit Kewalramani and Lou, {Silvia J.} and Shiming Zhang and Kumaresan Prabakaran and Yamuna Ezhumalai and Choongik Kim and Huang, {Peng Yi} and Charlotte Stern and Chang, {Wen Chung} and Bedzyk, {Michael J.} and Chen, {Lin X.} and Chen, {Ming Chou} and Antonio Facchetti and Marks, {Tobin J}",
year = "2015",
doi = "10.1002/aelm.201500098",
language = "English",
volume = "1",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "8",

}

TY - JOUR

T1 - Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)

AU - Youn, Jangdae

AU - Vegiraju, Sureshraju

AU - Emery, Jonathan D.

AU - Leever, Benjamin J.

AU - Kewalramani, Sumit

AU - Lou, Silvia J.

AU - Zhang, Shiming

AU - Prabakaran, Kumaresan

AU - Ezhumalai, Yamuna

AU - Kim, Choongik

AU - Huang, Peng Yi

AU - Stern, Charlotte

AU - Chang, Wen Chung

AU - Bedzyk, Michael J.

AU - Chen, Lin X.

AU - Chen, Ming Chou

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2015

Y1 - 2015

N2 - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.

AB - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.

KW - dithienothiophenes (DTTs)

KW - fused thiophenes

KW - organic semiconductors

KW - organic thin film transistors (OTFTs)

KW - perfluorophenyl

KW - tetrathienoacens (TTAs)

KW - thienothiophenes (TTs)

UR - http://www.scopus.com/inward/record.url?scp=84952815817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952815817&partnerID=8YFLogxK

U2 - 10.1002/aelm.201500098

DO - 10.1002/aelm.201500098

M3 - Article

AN - SCOPUS:84952815817

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 8

M1 - 1500098

ER -