Abstract
Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.
| Original language | English |
|---|---|
| Article number | 1500098 |
| Journal | Advanced Electronic Materials |
| Volume | 1 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2015 |
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Keywords
- dithienothiophenes (DTTs)
- fused thiophenes
- organic semiconductors
- organic thin film transistors (OTFTs)
- perfluorophenyl
- tetrathienoacens (TTAs)
- thienothiophenes (TTs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs). / Youn, Jangdae; Vegiraju, Sureshraju; Emery, Jonathan D.; Leever, Benjamin J.; Kewalramani, Sumit; Lou, Silvia J.; Zhang, Shiming; Prabakaran, Kumaresan; Ezhumalai, Yamuna; Kim, Choongik; Huang, Peng Yi; Stern, Charlotte; Chang, Wen Chung; Bedzyk, Michael J.; Chen, Lin X.; Chen, Ming Chou; Facchetti, Antonio; Marks, Tobin J.
In: Advanced Electronic Materials, Vol. 1, No. 8, 1500098, 2015.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)
AU - Youn, Jangdae
AU - Vegiraju, Sureshraju
AU - Emery, Jonathan D.
AU - Leever, Benjamin J.
AU - Kewalramani, Sumit
AU - Lou, Silvia J.
AU - Zhang, Shiming
AU - Prabakaran, Kumaresan
AU - Ezhumalai, Yamuna
AU - Kim, Choongik
AU - Huang, Peng Yi
AU - Stern, Charlotte
AU - Chang, Wen Chung
AU - Bedzyk, Michael J.
AU - Chen, Lin X.
AU - Chen, Ming Chou
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2015
Y1 - 2015
N2 - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.
AB - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.
KW - dithienothiophenes (DTTs)
KW - fused thiophenes
KW - organic semiconductors
KW - organic thin film transistors (OTFTs)
KW - perfluorophenyl
KW - tetrathienoacens (TTAs)
KW - thienothiophenes (TTs)
UR - http://www.scopus.com/inward/record.url?scp=84952815817&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952815817&partnerID=8YFLogxK
U2 - 10.1002/aelm.201500098
DO - 10.1002/aelm.201500098
M3 - Article
AN - SCOPUS:84952815817
VL - 1
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 8
M1 - 1500098
ER -