TY - JOUR
T1 - Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs)
AU - Youn, Jangdae
AU - Vegiraju, Sureshraju
AU - Emery, Jonathan D.
AU - Leever, Benjamin J.
AU - Kewalramani, Sumit
AU - Lou, Silvia J.
AU - Zhang, Shiming
AU - Prabakaran, Kumaresan
AU - Ezhumalai, Yamuna
AU - Kim, Choongik
AU - Huang, Peng Yi
AU - Stern, Charlotte
AU - Chang, Wen Chung
AU - Bedzyk, Michael J.
AU - Chen, Lin X.
AU - Chen, Ming Chou
AU - Facchetti, Antonio
AU - Marks, Tobin J.
N1 - Funding Information:
J.Y. and S.V. contributed equally to this work. This research was supported by the NSF MRSEC program (Grant No. DMR-1121262) at the Materials Research Center of Northwestern U., by AFOSR Grant No. FA9550-08-1-0331, by the National Science Council, Taiwan, Republic of China (Grant Nos. NSC102-2923-M-008-004-MY2 and MOST 103-2113-M-008-004), and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2014R1A1A1A05002158) and by the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT and Future Planning (Code No. 2013M3A6A5073175). Use of the Advanced Photon Source, 33BM-C, was supported by the U.S. DOE, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This work made use of the J. B. Cohen X-ray Diffraction Facility.
PY - 2015/8
Y1 - 2015/8
N2 - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.
AB - Three new fused thiophene semiconductors, end-capped with diperfluorophenylthien-2-yl (DFPT) groups (DFPT-thieno[2′,3′:4,5]thieno[3,2-b]thieno[2,3-d]thiophene (TTA), DFPT-dithieno[2,3-b:3′,2′-d]thiophenes (DTT), and DFPT-thieno[3,2-b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien-2-yl end-functionalized derivatives are determined by single crystal X-ray diffraction. DFPT-TTA and DFPT-TT exhibit good n-type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n-type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n-octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor-phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment.
KW - dithienothiophenes (DTTs)
KW - fused thiophenes
KW - organic semiconductors
KW - organic thin film transistors (OTFTs)
KW - perfluorophenyl
KW - tetrathienoacens (TTAs)
KW - thienothiophenes (TTs)
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U2 - 10.1002/aelm.201500098
DO - 10.1002/aelm.201500098
M3 - Article
AN - SCOPUS:84952815817
VL - 1
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 8
M1 - 1500098
ER -