Dirac cone engineering in Bi2Se3 thin films

Hosub Jin, Jung Hwan Song, Arthur J Freeman

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi 2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi 2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.

Original languageEnglish
Article number125319
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number12
DOIs
Publication statusPublished - Mar 29 2011

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Cones
cones
engineering
Thin films
Substitution reactions
thin films
Atoms
Magnetoelectronics
Bismuth
Ultrathin films
Surface states
substitutes
Valence bands
Scattering
bismuth
atoms
slabs
Geometry
insulators
valence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Dirac cone engineering in Bi2Se3 thin films. / Jin, Hosub; Song, Jung Hwan; Freeman, Arthur J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 12, 125319, 29.03.2011.

Research output: Contribution to journalArticle

@article{2e094da5d20441768cda407da7422a42,
title = "Dirac cone engineering in Bi2Se3 thin films",
abstract = "In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi 2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi 2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.",
author = "Hosub Jin and Song, {Jung Hwan} and Freeman, {Arthur J}",
year = "2011",
month = "3",
day = "29",
doi = "10.1103/PhysRevB.83.125319",
language = "English",
volume = "83",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Dirac cone engineering in Bi2Se3 thin films

AU - Jin, Hosub

AU - Song, Jung Hwan

AU - Freeman, Arthur J

PY - 2011/3/29

Y1 - 2011/3/29

N2 - In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi 2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi 2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.

AB - In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi 2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi 2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.

UR - http://www.scopus.com/inward/record.url?scp=79961040990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79961040990&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.83.125319

DO - 10.1103/PhysRevB.83.125319

M3 - Article

VL - 83

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 125319

ER -