Dirac cone engineering in Bi2Se3 thin films

Hosub Jin, Jung Hwan Song, Arthur J. Freeman

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi 2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi 2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.

Original languageEnglish
Article number125319
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - Mar 29 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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