Direct correlation of transport properties and microstructure in Y1Ba2Cu3O7-x thin film grain boundaries

B. V. Vuchic, K. L. Merkle, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Individual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablution. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
Publication statusPublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994


OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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