Direct correlation of transport properties and microstructure in Y1Ba2Cu3O7-x thin film grain boundaries

B. V. Vuchic, K. L. Merkle, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

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Abstract

Individual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablution. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages419-424
Number of pages6
Volume357
Publication statusPublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994

Other

OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA
Period11/28/9412/2/94

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vuchic, B. V., Merkle, K. L., Buchholz, D. B., Chang, R. P. H., & Marks, L. D. (1995). Direct correlation of transport properties and microstructure in Y1Ba2Cu3O7-x thin film grain boundaries. In Materials Research Society Symposium - Proceedings (Vol. 357, pp. 419-424). Materials Research Society.