Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, S. K. Kim, D. Chang, Y. Xuan, S. Mohammadi, P. D. Ye, G. Lu, A. Facchetti, T. J. Marks

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1 μm gate-length depletion-mode n -channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2 - 10-5 A cm2, a maximum drain current of 260 mAmm at 2 V forward gate bias, and a maximum intrinsic transconductance of 127 mSmm. These devices achieve a current cutoff frequency (fT) of 10.6 GHz and a maximum oscillation frequency (fmax) of 6.9 GHz. Nearly hysteresis-free Ids - Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

Original languageEnglish
Article number092103
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - Sep 7 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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