Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, S. K. Kim, D. Chang, Y. Xuan, S. Mohammadi, P. D. Ye, G. Lu, A. Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1 μm gate-length depletion-mode n -channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2 - 10-5 A cm2, a maximum drain current of 260 mAmm at 2 V forward gate bias, and a maximum intrinsic transconductance of 127 mSmm. These devices achieve a current cutoff frequency (fT) of 10.6 GHz and a maximum oscillation frequency (fmax) of 6.9 GHz. Nearly hysteresis-free Ids - Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

Original languageEnglish
Article number092103
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007

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MIS (semiconductors)
radio frequencies
field effect transistors
direct current
flicker
transconductance
depletion
leakage
cut-off
hysteresis
current density
oscillations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics. / Lin, H. C.; Kim, S. K.; Chang, D.; Xuan, Y.; Mohammadi, S.; Ye, P. D.; Lu, G.; Facchetti, A.; Marks, Tobin J.

In: Applied Physics Letters, Vol. 91, No. 9, 092103, 2007.

Research output: Contribution to journalArticle

Lin, H. C. ; Kim, S. K. ; Chang, D. ; Xuan, Y. ; Mohammadi, S. ; Ye, P. D. ; Lu, G. ; Facchetti, A. ; Marks, Tobin J. / Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics. In: Applied Physics Letters. 2007 ; Vol. 91, No. 9.
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