Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics

Amirhossein Behranginia, Poya Yasaei, Arnab K. Majee, Vinod K. Sangwan, Fei Long, Cameron J. Foss, Tara Foroozan, Shadi Fuladi, Mohammad Reza Hantehzadeh, Reza Shahbazian-Yassar, Mark C Hersam, Zlatan Aksamija, Amin Salehi-Khojin

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

Original languageEnglish
Article number1604301
JournalSmall
Volume13
Issue number30
DOIs
Publication statusPublished - Aug 11 2017

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Heterojunctions
Noise
Electronic equipment
Psychological Techniques
Equipment and Supplies
Growth
Electronic properties
Band structure
Seed
Chemical vapor deposition
Seeds
Fabrication

Keywords

  • 1/f noise
  • graphene
  • Kelvin probe force microscopy
  • lateral (in-plane) heterostructures
  • MoS

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Engineering (miscellaneous)

Cite this

Behranginia, A., Yasaei, P., Majee, A. K., Sangwan, V. K., Long, F., Foss, C. J., ... Salehi-Khojin, A. (2017). Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics. Small, 13(30), [1604301]. https://doi.org/10.1002/smll.201604301

Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics. / Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K.; Sangwan, Vinod K.; Long, Fei; Foss, Cameron J.; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin.

In: Small, Vol. 13, No. 30, 1604301, 11.08.2017.

Research output: Contribution to journalArticle

Behranginia, A, Yasaei, P, Majee, AK, Sangwan, VK, Long, F, Foss, CJ, Foroozan, T, Fuladi, S, Hantehzadeh, MR, Shahbazian-Yassar, R, Hersam, MC, Aksamija, Z & Salehi-Khojin, A 2017, 'Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics', Small, vol. 13, no. 30, 1604301. https://doi.org/10.1002/smll.201604301
Behranginia A, Yasaei P, Majee AK, Sangwan VK, Long F, Foss CJ et al. Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics. Small. 2017 Aug 11;13(30). 1604301. https://doi.org/10.1002/smll.201604301
Behranginia, Amirhossein ; Yasaei, Poya ; Majee, Arnab K. ; Sangwan, Vinod K. ; Long, Fei ; Foss, Cameron J. ; Foroozan, Tara ; Fuladi, Shadi ; Hantehzadeh, Mohammad Reza ; Shahbazian-Yassar, Reza ; Hersam, Mark C ; Aksamija, Zlatan ; Salehi-Khojin, Amin. / Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics. In: Small. 2017 ; Vol. 13, No. 30.
@article{c40ebf663bb345cbb6b61002ac9575ab,
title = "Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics",
abstract = "Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.",
keywords = "1/f noise, graphene, Kelvin probe force microscopy, lateral (in-plane) heterostructures, MoS",
author = "Amirhossein Behranginia and Poya Yasaei and Majee, {Arnab K.} and Sangwan, {Vinod K.} and Fei Long and Foss, {Cameron J.} and Tara Foroozan and Shadi Fuladi and Hantehzadeh, {Mohammad Reza} and Reza Shahbazian-Yassar and Hersam, {Mark C} and Zlatan Aksamija and Amin Salehi-Khojin",
year = "2017",
month = "8",
day = "11",
doi = "10.1002/smll.201604301",
language = "English",
volume = "13",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "30",

}

TY - JOUR

T1 - Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics

AU - Behranginia, Amirhossein

AU - Yasaei, Poya

AU - Majee, Arnab K.

AU - Sangwan, Vinod K.

AU - Long, Fei

AU - Foss, Cameron J.

AU - Foroozan, Tara

AU - Fuladi, Shadi

AU - Hantehzadeh, Mohammad Reza

AU - Shahbazian-Yassar, Reza

AU - Hersam, Mark C

AU - Aksamija, Zlatan

AU - Salehi-Khojin, Amin

PY - 2017/8/11

Y1 - 2017/8/11

N2 - Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

AB - Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

KW - 1/f noise

KW - graphene

KW - Kelvin probe force microscopy

KW - lateral (in-plane) heterostructures

KW - MoS

UR - http://www.scopus.com/inward/record.url?scp=85020540483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020540483&partnerID=8YFLogxK

U2 - 10.1002/smll.201604301

DO - 10.1002/smll.201604301

M3 - Article

VL - 13

JO - Small

JF - Small

SN - 1613-6810

IS - 30

M1 - 1604301

ER -