Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.
- 1/f noise
- Kelvin probe force microscopy
- lateral (in-plane) heterostructures
ASJC Scopus subject areas
- Materials Science(all)