Abstract
Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to 70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, -1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
| Original language | English |
|---|---|
| Article number | 9006 |
| Journal | Nature Communications |
| Volume | 6 |
| DOIs | |
| Publication status | Published - Aug 10 2015 |
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ASJC Scopus subject areas
- Biochemistry, Genetics and Molecular Biology(all)
- Chemistry(all)
- Physics and Astronomy(all)
Cite this
Direct oriented growth of armchair graphene nanoribbons on germanium. / Jacobberger, Robert M.; Kiraly, Brian; Fortin-Deschenes, Matthieu; Levesque, Pierre L.; McElhinny, Kyle M.; Brady, Gerald J.; Rojas Delgado, Richard; Singha Roy, Susmit; Mannix, Andrew; Lagally, Max G.; Evans, Paul G.; Desjardins, Patrick; Martel, Richard; Hersam, Mark C.; Guisinger, Nathan P.; Arnold, Michael S.
In: Nature Communications, Vol. 6, 9006, 10.08.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct oriented growth of armchair graphene nanoribbons on germanium
AU - Jacobberger, Robert M.
AU - Kiraly, Brian
AU - Fortin-Deschenes, Matthieu
AU - Levesque, Pierre L.
AU - McElhinny, Kyle M.
AU - Brady, Gerald J.
AU - Rojas Delgado, Richard
AU - Singha Roy, Susmit
AU - Mannix, Andrew
AU - Lagally, Max G.
AU - Evans, Paul G.
AU - Desjardins, Patrick
AU - Martel, Richard
AU - Hersam, Mark C.
AU - Guisinger, Nathan P.
AU - Arnold, Michael S.
PY - 2015/8/10
Y1 - 2015/8/10
N2 - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to 70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, -1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
AB - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to 70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, -1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
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U2 - 10.1038/ncomms9006
DO - 10.1038/ncomms9006
M3 - Article
AN - SCOPUS:84938913211
VL - 6
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 9006
ER -