TY - JOUR
T1 - Direct oriented growth of armchair graphene nanoribbons on germanium
AU - Jacobberger, Robert M.
AU - Kiraly, Brian
AU - Fortin-Deschenes, Matthieu
AU - Levesque, Pierre L.
AU - McElhinny, Kyle M.
AU - Brady, Gerald J.
AU - Rojas Delgado, Richard
AU - Singha Roy, Susmit
AU - Mannix, Andrew
AU - Lagally, Max G.
AU - Evans, Paul G.
AU - Desjardins, Patrick
AU - Martel, Richard
AU - Hersam, Mark C.
AU - Guisinger, Nathan P.
AU - Arnold, Michael S.
N1 - Funding Information:
Research primarily supported by the DOE Office of Science Early Career Research Program (Grant number DE-SC0006414) through the Office of Basic Energy Sciences (R.M.J., G.J.B., S.S-R. and M.S.A.) for discovery of the nanoribbon synthesis, investigation of the morphological evolution of the nanoribbons, development of control over the nanoribbon evolution and growth kinetics, characterization of the morphology and microstructure of the nanoribbons via SEM, AFM and Raman spectroscopy, fabrication of nanoribbon field-effect transistors, and characterization of their charge transport properties. Research partially supported by: the DOE SISGR (No. DE-FG02-09ER16109) (B.K., A.M., M.C.H. and N.P.G.) for the characterization of the nanoribbon edge structure and electronic structure using STM and STS; the Natural Science and Engineering Research Council (M.F-D., P.L.L., P.D. and R.M.) for the characterization of the nanoribbon crystallinity and orientation via LEEM and LEED; the University of Wisconsin Materials Research Science and Engineering Center (MRSEC) (No. DMR-1121288) (K.M.M. and P.G.E.) for analysis of the morphology of the Ge hill-and-valley structures using XRR; and the DOE (No. DE-FG02-03ER46028) (R.R-D. and M.G.L.) for characterization of the stability of the nanoribbon/Ge interface with XPS. R.M.J. acknowledges support from the Department of Defense (DOD) Air Force Office of Scientific Research through the National Defense Science and Engineering Graduate Fellowship (No. 32 CFR 168a). B.K., G.J.B. and A.M. acknowledge support from National Science Foundation Graduate Research Fellowships. K.M.M. acknowledges support from a 3M Graduate Fellowship. This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences User Facility under Contract No. DE-AC02-06CH11357 (B.K., A.M. and N.P.G.). The authors also thank Oussama Moutanabbir for discussions about the LEEM and LEED studies.
PY - 2015/8/10
Y1 - 2015/8/10
N2 - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
AB - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
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U2 - 10.1038/ncomms9006
DO - 10.1038/ncomms9006
M3 - Article
AN - SCOPUS:84938913211
VL - 6
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 8006
ER -