TY - JOUR
T1 - Direct Printing of Graphene Electrodes for High-Performance Organic Inverters
AU - Naik, Aditi R.
AU - Kim, Jae Joon
AU - Usluer, Özlem
AU - Gonzalez Arellano, D. Leonardo
AU - Secor, Ethan B.
AU - Facchetti, Antonio
AU - Hersam, Mark C.
AU - Briseno, Alejandro L.
AU - Watkins, James J.
N1 - Funding Information:
A.R.N. and J.J.W. acknowledge funding from the National Science Foundation (NSF) Center for Hierarchical Manufacturing at the University of Massachusetts at Amherst (CMMI-1025020). J.J.K., D.L.G.A., and A.L.B. acknowledge funding from NSF (DMR-1508627). E.B.S. and M.C.H. acknowledge funding from the Air Force Research Laboratory under agreement number FA8650-15-2-5518 and NSF (CMMI-1727846). The U.S. Government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the sponsors.
PY - 2018/5/9
Y1 - 2018/5/9
N2 - Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
AB - Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
KW - direct transfer printing
KW - graphene ink
KW - graphene patterns
KW - organic transistors
KW - printed electronics
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U2 - 10.1021/acsami.8b01302
DO - 10.1021/acsami.8b01302
M3 - Article
C2 - 29667396
AN - SCOPUS:85046413331
VL - 10
SP - 15988
EP - 15995
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 18
ER -