Abstract
Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
| Original language | English |
|---|---|
| Pages (from-to) | 15988-15995 |
| Number of pages | 8 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 10 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - May 9 2018 |
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Keywords
- direct transfer printing
- graphene ink
- graphene patterns
- organic transistors
- printed electronics
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Direct Printing of Graphene Electrodes for High-Performance Organic Inverters. / Naik, Aditi R.; Kim, Jae Joon; Usluer, Özlem; Gonzalez Arellano, D. Leonardo; Secor, Ethan B.; Facchetti, Antonio; Hersam, Mark C; Briseno, Alejandro L.; Watkins, James J.
In: ACS Applied Materials and Interfaces, Vol. 10, No. 18, 09.05.2018, p. 15988-15995.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct Printing of Graphene Electrodes for High-Performance Organic Inverters
AU - Naik, Aditi R.
AU - Kim, Jae Joon
AU - Usluer, Özlem
AU - Gonzalez Arellano, D. Leonardo
AU - Secor, Ethan B.
AU - Facchetti, Antonio
AU - Hersam, Mark C
AU - Briseno, Alejandro L.
AU - Watkins, James J.
PY - 2018/5/9
Y1 - 2018/5/9
N2 - Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
AB - Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
KW - direct transfer printing
KW - graphene ink
KW - graphene patterns
KW - organic transistors
KW - printed electronics
UR - http://www.scopus.com/inward/record.url?scp=85046413331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85046413331&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b01302
DO - 10.1021/acsami.8b01302
M3 - Article
VL - 10
SP - 15988
EP - 15995
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 18
ER -