Abstract
The dc conductivity of natural single‐crystal α‐Fe2O3 was measured as a function of O partial pressure from 10−4 to 1 atm at 950° to 1422°C. The conductivity was independent of O2 partial pressure, indicating that hematite is an intrinsic semiconductor with lattice defect concentrations much lower than the concentration of intrinsic electrons (holes). The activation energy of the dc conductivity was 1.18 eV. The iron tracer (55Fe) diffusion coefficients, measured as a function of O2 partial pressure at 1200° and 1300°C, increased as the O2 partial pressure decreased, with a pressure dependence of ‐0.75; the iron therefore migrates interstitially.
| Original language | English |
|---|---|
| Pages (from-to) | 211-213 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 55 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1972 |
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ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
Direct‐Current Conductivity and Iron Tracer Diffusion in Hematite at High Temperatures. / Chang, Robert P. H.; WAGNER, J. B.
In: Journal of the American Ceramic Society, Vol. 55, No. 4, 1972, p. 211-213.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct‐Current Conductivity and Iron Tracer Diffusion in Hematite at High Temperatures
AU - Chang, Robert P. H.
AU - WAGNER, J. B.
PY - 1972
Y1 - 1972
N2 - The dc conductivity of natural single‐crystal α‐Fe2O3 was measured as a function of O partial pressure from 10−4 to 1 atm at 950° to 1422°C. The conductivity was independent of O2 partial pressure, indicating that hematite is an intrinsic semiconductor with lattice defect concentrations much lower than the concentration of intrinsic electrons (holes). The activation energy of the dc conductivity was 1.18 eV. The iron tracer (55Fe) diffusion coefficients, measured as a function of O2 partial pressure at 1200° and 1300°C, increased as the O2 partial pressure decreased, with a pressure dependence of ‐0.75; the iron therefore migrates interstitially.
AB - The dc conductivity of natural single‐crystal α‐Fe2O3 was measured as a function of O partial pressure from 10−4 to 1 atm at 950° to 1422°C. The conductivity was independent of O2 partial pressure, indicating that hematite is an intrinsic semiconductor with lattice defect concentrations much lower than the concentration of intrinsic electrons (holes). The activation energy of the dc conductivity was 1.18 eV. The iron tracer (55Fe) diffusion coefficients, measured as a function of O2 partial pressure at 1200° and 1300°C, increased as the O2 partial pressure decreased, with a pressure dependence of ‐0.75; the iron therefore migrates interstitially.
UR - http://www.scopus.com/inward/record.url?scp=84979336542&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84979336542&partnerID=8YFLogxK
U2 - 10.1111/j.1151-2916.1972.tb11261.x
DO - 10.1111/j.1151-2916.1972.tb11261.x
M3 - Article
AN - SCOPUS:84979336542
VL - 55
SP - 211
EP - 213
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 4
ER -