Dislocation arrangements in pentacene thin films

B. Nickel, R. Barabash, R. Ruiz, N. Koch, A. Kahn, Leonard C Feldman, R. F. Haglund, G. Scoles

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

We have studied the growth of pentacene films (2-8 monolayers) on modified Si-wafer surfaces by means of synchrotron x-ray diffraction. The diffraction data reveal a nonthermal damping of the (coherent) Bragg reflection intensities according to an exponential dependence on the 3/2 power of the momentum transfer. The simultaneous presence of strong diffuse scattering centered around the Bragg positions indicates the presence of local defects. A quantitative analysis of the Bragg and diffuse scattering allows us to identify screw and edge dislocations as the main defects on the molecular scale. We quantify dislocation densities as a function of substrate termination.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number12
DOIs
Publication statusPublished - Sep 2004

Fingerprint

Diffraction
Scattering
Thin films
Edge dislocations
Screw dislocations
Defects
Momentum transfer
screw dislocations
defects
edge dislocations
thin films
Synchrotrons
scattering
quantitative analysis
momentum transfer
Monolayers
synchrotrons
x ray diffraction
Damping
damping

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dislocation arrangements in pentacene thin films. / Nickel, B.; Barabash, R.; Ruiz, R.; Koch, N.; Kahn, A.; Feldman, Leonard C; Haglund, R. F.; Scoles, G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 12, 09.2004.

Research output: Contribution to journalArticle

Nickel, B. ; Barabash, R. ; Ruiz, R. ; Koch, N. ; Kahn, A. ; Feldman, Leonard C ; Haglund, R. F. ; Scoles, G. / Dislocation arrangements in pentacene thin films. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 70, No. 12.
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