Dislocation arrangements in pentacene thin films

B. Nickel, R. Barabash, R. Ruiz, N. Koch, A. Kahn, L. C. Feldman, R. F. Haglund, G. Scoles

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Abstract

We have studied the growth of pentacene films (2-8 monolayers) on modified Si-wafer surfaces by means of synchrotron x-ray diffraction. The diffraction data reveal a nonthermal damping of the (coherent) Bragg reflection intensities according to an exponential dependence on the 3/2 power of the momentum transfer. The simultaneous presence of strong diffuse scattering centered around the Bragg positions indicates the presence of local defects. A quantitative analysis of the Bragg and diffuse scattering allows us to identify screw and edge dislocations as the main defects on the molecular scale. We quantify dislocation densities as a function of substrate termination.

Original languageEnglish
Pages (from-to)125401-1-125401-7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number12
DOIs
Publication statusPublished - Sep 1 2004

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nickel, B., Barabash, R., Ruiz, R., Koch, N., Kahn, A., Feldman, L. C., Haglund, R. F., & Scoles, G. (2004). Dislocation arrangements in pentacene thin films. Physical Review B - Condensed Matter and Materials Physics, 70(12), 125401-1-125401-7. https://doi.org/10.1103/PhysRevB.70.125401