Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

P. Asoka-Kumar, H. J. Gossmann, F. C. Unterwald, Leonard C Feldman, T. C. Leung, H. L. Au, V. Talyanski, B. Nielsen, K. G. Lynn

Research output: Contribution to journalArticle

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Abstract

Positron annihilation in Si is a quantitaive, depth-sensitive technique for the detection of vacancylike defects or voids. A sensitivity of 5×1015 cm-3 for voidlike defects is easily achieved. The technique has been applied to a study of point-defect distributions in thin films of Si grown by molecular-beam epitaxy. A special procedure was developed to remove the influence of the native oxide on the positron measurement. 200-nm-thick films grown at temperatures between 475 and 560°C show no defects below the sensitivity limit and are indistinguishable from the bulk substrate. So are films grown at 220°C, provided a 2-min high-temperature anneal to a peak temperature of 500°C is executed every 30 nm during growth. If TRTA=450°C, part of the film contains vacancylike defects to a concentration of 1018 cm-3. These results correlate well with current-voltage characteristics of p-n junctions grown with different rapid thermal anneal (RTA) temperatures. Ion scattering, with a defect sensitivity of 1%, shows no difference between films grown with different TRTA. Recrystallization of amorphous films, deposited at room temperature and annealed in situ at 550°C, always leaves a significant defect concentration of 2×1018 cm-3; those defects are reduced but still present even after a 2-h 800°C furnace anneal.

Original languageEnglish
Pages (from-to)5345-5353
Number of pages9
JournalPhysical Review B
Volume48
Issue number8
DOIs
Publication statusPublished - 1993

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Point defects
Epitaxial growth
Molecular beam epitaxy
epitaxy
point defects
solid phases
molecular beam epitaxy
Defects
defects
Temperature
sensitivity
Positron annihilation
Positrons
ion scattering
Amorphous films
Current voltage characteristics
positron annihilation
p-n junctions
Thick films
Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy. / Asoka-Kumar, P.; Gossmann, H. J.; Unterwald, F. C.; Feldman, Leonard C; Leung, T. C.; Au, H. L.; Talyanski, V.; Nielsen, B.; Lynn, K. G.

In: Physical Review B, Vol. 48, No. 8, 1993, p. 5345-5353.

Research output: Contribution to journalArticle

Asoka-Kumar, P, Gossmann, HJ, Unterwald, FC, Feldman, LC, Leung, TC, Au, HL, Talyanski, V, Nielsen, B & Lynn, KG 1993, 'Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy', Physical Review B, vol. 48, no. 8, pp. 5345-5353. https://doi.org/10.1103/PhysRevB.48.5345
Asoka-Kumar, P. ; Gossmann, H. J. ; Unterwald, F. C. ; Feldman, Leonard C ; Leung, T. C. ; Au, H. L. ; Talyanski, V. ; Nielsen, B. ; Lynn, K. G. / Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy. In: Physical Review B. 1993 ; Vol. 48, No. 8. pp. 5345-5353.
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