Dopant distributions in PbTe-based thermoelectric materials

Ivan D. Blum, Dieter Isheim, David N. Seidman, Jiaqing He, John Androulakis, Kanishka Biswas, Vinayak P. Dravid, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Atom-probe tomography (APT) is utilized to characterize the dopant distribution in two thermoelectric materials systems: (1) PbTe-2 mol.%SrTe-1 mol.%Na 2Te, and (2) codoped PbTe-1.25 mol.%K-1.4 mol.%Na. We observe the presence of Na-rich precipitates of a few nanometers in diameter in both systems. Both concentration frequency distribution analyses and partial radial distribution functions are employed to analyze the tendency for dopant clustering detected by APT. In the codoped sample, K accumulates significantly in Na-rich precipitates, while in the Sr-containing sample, Sr is homogeneously distributed. High-resolution transmission electron microscopy also reveals the presence of precipitates having platelet morphology, which are oriented parallel to the {001} planes.

Original languageEnglish
Pages (from-to)1583-1588
Number of pages6
JournalJournal of Electronic Materials
Volume41
Issue number6
DOIs
Publication statusPublished - Jun 2012

Fingerprint

thermoelectric materials
Precipitates
precipitates
Doping (additives)
Tomography
tomography
Atoms
probes
frequency distribution
High resolution transmission electron microscopy
Platelets
platelets
radial distribution
Distribution functions
atoms
tendencies
distribution functions
transmission electron microscopy
high resolution

Keywords

  • atom-probe tomography
  • K
  • Na
  • PbTe
  • precipitates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Blum, I. D., Isheim, D., Seidman, D. N., He, J., Androulakis, J., Biswas, K., ... Kanatzidis, M. G. (2012). Dopant distributions in PbTe-based thermoelectric materials. Journal of Electronic Materials, 41(6), 1583-1588. https://doi.org/10.1007/s11664-012-1972-2

Dopant distributions in PbTe-based thermoelectric materials. / Blum, Ivan D.; Isheim, Dieter; Seidman, David N.; He, Jiaqing; Androulakis, John; Biswas, Kanishka; Dravid, Vinayak P.; Kanatzidis, Mercouri G.

In: Journal of Electronic Materials, Vol. 41, No. 6, 06.2012, p. 1583-1588.

Research output: Contribution to journalArticle

Blum, ID, Isheim, D, Seidman, DN, He, J, Androulakis, J, Biswas, K, Dravid, VP & Kanatzidis, MG 2012, 'Dopant distributions in PbTe-based thermoelectric materials', Journal of Electronic Materials, vol. 41, no. 6, pp. 1583-1588. https://doi.org/10.1007/s11664-012-1972-2
Blum ID, Isheim D, Seidman DN, He J, Androulakis J, Biswas K et al. Dopant distributions in PbTe-based thermoelectric materials. Journal of Electronic Materials. 2012 Jun;41(6):1583-1588. https://doi.org/10.1007/s11664-012-1972-2
Blum, Ivan D. ; Isheim, Dieter ; Seidman, David N. ; He, Jiaqing ; Androulakis, John ; Biswas, Kanishka ; Dravid, Vinayak P. ; Kanatzidis, Mercouri G. / Dopant distributions in PbTe-based thermoelectric materials. In: Journal of Electronic Materials. 2012 ; Vol. 41, No. 6. pp. 1583-1588.
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