Dopant segregation and giant magnetoresistance in manganese-doped germanium

A. P. Li, C. Zeng, K. Van Benthem, M. F. Chisholm, J. Shen, S. V.S. Nageswara Rao, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, H. H. Weitering

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Abstract

Dopant segregation in a Mnx Ge1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.

Original languageEnglish
Article number201201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number20
DOIs
Publication statusPublished - May 10 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Li, A. P., Zeng, C., Van Benthem, K., Chisholm, M. F., Shen, J., Nageswara Rao, S. V. S., Dixit, S. K., Feldman, L. C., Petukhov, A. G., Foygel, M., & Weitering, H. H. (2007). Dopant segregation and giant magnetoresistance in manganese-doped germanium. Physical Review B - Condensed Matter and Materials Physics, 75(20), [201201]. https://doi.org/10.1103/PhysRevB.75.201201