Doping and alloying trends in new thermoelectric materials

Sim Loo, Sangeeta Lal, Theodora Kyratsi, Duck Young Chung, Kuei Fang Hsu, Mercouri G. Kanatzidis, Timothy P. Hogan

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

New thermoelectric bulk materials such as CsBi4Te6 have shown superior properties to traditional materials, however, optimal performance requires continuing investigations of doping and alloying trends. A recently modified throughput measurement system is presented for doping and alloying investigations in several new thermoelectric materials. The modification includes a four-probe configuration for more accurate measurements while maintaining a relatively short sample preparation time. The system is fully computer controlled and provides flexible contacts to accommodate various sample dimensions. Optimal compositions are then identified for further investigations in thermoelectric prototype modules. The most promising materials will be further characterized for electrical conductivity, thermoelectric power, thermal conductivity, and Hall effect measurements as a function of temperature.

Original languageEnglish
Pages (from-to)77-84
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume691
Publication statusPublished - Jan 1 2002
EventThermoelectric Materials 2001-Research and Applications - Boston, MA, United States
Duration: Nov 26 2001Nov 29 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Loo, S., Lal, S., Kyratsi, T., Chung, D. Y., Hsu, K. F., Kanatzidis, M. G., & Hogan, T. P. (2002). Doping and alloying trends in new thermoelectric materials. Materials Research Society Symposium - Proceedings, 691, 77-84.