Doping studies of n-type CsBi4Te6 thermoelectric materials

M. A. Lane, J. R. Ireland, P. W. Brazis, T. Kyratsi, D. Y. Chung, M. G. Kanatzidis, C. R. Kannewurf

Research output: Contribution to journalConference article

Abstract

We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

Original languageEnglish
Pages (from-to)Z751-Z756
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lane, M. A., Ireland, J. R., Brazis, P. W., Kyratsi, T., Chung, D. Y., Kanatzidis, M. G., & Kannewurf, C. R. (2001). Doping studies of n-type CsBi4Te6 thermoelectric materials. Proceedings - IEEE International Symposium on Circuits and Systems, 4, Z751-Z756.