Doping studies of n-type CsBi4Te6 thermoelectric materials

M. A. Lane, J. R. Ireland, P. W. Brazis, T. Kyratsi, D. Y. Chung, Mercouri G Kanatzidis, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Doping (additives)
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lane, M. A., Ireland, J. R., Brazis, P. W., Kyratsi, T., Chung, D. Y., Kanatzidis, M. G., & Kannewurf, C. R. (2001). Doping studies of n-type CsBi4Te6 thermoelectric materials. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Doping studies of n-type CsBi4Te6 thermoelectric materials. / Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Kyratsi, T.; Chung, D. Y.; Kanatzidis, Mercouri G; Kannewurf, C. R.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lane, MA, Ireland, JR, Brazis, PW, Kyratsi, T, Chung, DY, Kanatzidis, MG & Kannewurf, CR 2001, Doping studies of n-type CsBi4Te6 thermoelectric materials. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Lane MA, Ireland JR, Brazis PW, Kyratsi T, Chung DY, Kanatzidis MG et al. Doping studies of n-type CsBi4Te6 thermoelectric materials. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Lane, M. A. ; Ireland, J. R. ; Brazis, P. W. ; Kyratsi, T. ; Chung, D. Y. ; Kanatzidis, Mercouri G ; Kannewurf, C. R. / Doping studies of n-type CsBi4Te6 thermoelectric materials. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
@inproceedings{5db4706f3a7547bcbe7694a668cfd3d3,
title = "Doping studies of n-type CsBi4Te6 thermoelectric materials",
abstract = "We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5{\%} Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0{\%} Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.",
author = "Lane, {M. A.} and Ireland, {J. R.} and Brazis, {P. W.} and T. Kyratsi and Chung, {D. Y.} and Kanatzidis, {Mercouri G} and Kannewurf, {C. R.}",
year = "2001",
language = "English",
volume = "4",
booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems",

}

TY - GEN

T1 - Doping studies of n-type CsBi4Te6 thermoelectric materials

AU - Lane, M. A.

AU - Ireland, J. R.

AU - Brazis, P. W.

AU - Kyratsi, T.

AU - Chung, D. Y.

AU - Kanatzidis, Mercouri G

AU - Kannewurf, C. R.

PY - 2001

Y1 - 2001

N2 - We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

AB - We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

UR - http://www.scopus.com/inward/record.url?scp=0035019220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035019220&partnerID=8YFLogxK

M3 - Conference contribution

VL - 4

BT - Proceedings - IEEE International Symposium on Circuits and Systems

ER -