Drain current control in a hybrid molecular/MOSFET device

G. M. Laws, T. J. Thornton, Jinman Yang, Linda De la Garza, M. Kozicki, D. Gust, J. Gu, D. Sorid

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A significant shift in the threshold voltage was attributed to an increase in the electron charge density in the MOSFET channel, resulting from an increase in the positive fixed charge at the native oxide surface. A numerical simulation supports this conclusion. It is speculated that the molecules protonate the surface of the SiO2 due to the higher acidity of the molecular groups compared to that of the native oxide. To assess the validity of this hypothesis a series of molecules with similar structure but with different acidities (pKa values) were investigated. Preliminary results showing the systematic variation of ΔVth and pKa are presented.

Original languageEnglish
Pages (from-to)659-663
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
Publication statusPublished - Apr 1 2003
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: Jul 22 2002Jul 26 2002

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Keywords

  • Hybrid devices
  • Molecular sensitivity
  • SOI MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Laws, G. M., Thornton, T. J., Yang, J., De la Garza, L., Kozicki, M., Gust, D., Gu, J., & Sorid, D. (2003). Drain current control in a hybrid molecular/MOSFET device. Physica E: Low-Dimensional Systems and Nanostructures, 17(1-4), 659-663. https://doi.org/10.1016/S1386-9477(02)00923-2