Drain current control in a hybrid molecular/MOSFET device

G. M. Laws, T. J. Thornton, Jinman Yang, Linda De la Garza, M. Kozicki, John Devens Gust, J. Gu, D. Sorid

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A significant shift in the threshold voltage was attributed to an increase in the electron charge density in the MOSFET channel, resulting from an increase in the positive fixed charge at the native oxide surface. A numerical simulation supports this conclusion. It is speculated that the molecules protonate the surface of the SiO2 due to the higher acidity of the molecular groups compared to that of the native oxide. To assess the validity of this hypothesis a series of molecules with similar structure but with different acidities (pKa values) were investigated. Preliminary results showing the systematic variation of ΔVth and pKa are presented.

Original languageEnglish
Pages (from-to)659-663
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
Publication statusPublished - Apr 2003

Fingerprint

Drain current
Electric current control
MOSFET devices
field effect transistors
Acidity
acidity
Oxides
Molecules
oxides
Charge density
Threshold voltage
threshold currents
threshold voltage
molecules
Electrons
shift
Computer simulation
electrons
simulation

Keywords

  • Hybrid devices
  • Molecular sensitivity
  • SOI MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Laws, G. M., Thornton, T. J., Yang, J., De la Garza, L., Kozicki, M., Gust, J. D., ... Sorid, D. (2003). Drain current control in a hybrid molecular/MOSFET device. Physica E: Low-Dimensional Systems and Nanostructures, 17(1-4), 659-663. https://doi.org/10.1016/S1386-9477(02)00923-2

Drain current control in a hybrid molecular/MOSFET device. / Laws, G. M.; Thornton, T. J.; Yang, Jinman; De la Garza, Linda; Kozicki, M.; Gust, John Devens; Gu, J.; Sorid, D.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 17, No. 1-4, 04.2003, p. 659-663.

Research output: Contribution to journalArticle

Laws, GM, Thornton, TJ, Yang, J, De la Garza, L, Kozicki, M, Gust, JD, Gu, J & Sorid, D 2003, 'Drain current control in a hybrid molecular/MOSFET device', Physica E: Low-Dimensional Systems and Nanostructures, vol. 17, no. 1-4, pp. 659-663. https://doi.org/10.1016/S1386-9477(02)00923-2
Laws, G. M. ; Thornton, T. J. ; Yang, Jinman ; De la Garza, Linda ; Kozicki, M. ; Gust, John Devens ; Gu, J. ; Sorid, D. / Drain current control in a hybrid molecular/MOSFET device. In: Physica E: Low-Dimensional Systems and Nanostructures. 2003 ; Vol. 17, No. 1-4. pp. 659-663.
@article{ddf552af10cf463ca201b3faa53e7625,
title = "Drain current control in a hybrid molecular/MOSFET device",
abstract = "We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A significant shift in the threshold voltage was attributed to an increase in the electron charge density in the MOSFET channel, resulting from an increase in the positive fixed charge at the native oxide surface. A numerical simulation supports this conclusion. It is speculated that the molecules protonate the surface of the SiO2 due to the higher acidity of the molecular groups compared to that of the native oxide. To assess the validity of this hypothesis a series of molecules with similar structure but with different acidities (pKa values) were investigated. Preliminary results showing the systematic variation of ΔVth and pKa are presented.",
keywords = "Hybrid devices, Molecular sensitivity, SOI MOSFET",
author = "Laws, {G. M.} and Thornton, {T. J.} and Jinman Yang and {De la Garza}, Linda and M. Kozicki and Gust, {John Devens} and J. Gu and D. Sorid",
year = "2003",
month = "4",
doi = "10.1016/S1386-9477(02)00923-2",
language = "English",
volume = "17",
pages = "659--663",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Drain current control in a hybrid molecular/MOSFET device

AU - Laws, G. M.

AU - Thornton, T. J.

AU - Yang, Jinman

AU - De la Garza, Linda

AU - Kozicki, M.

AU - Gust, John Devens

AU - Gu, J.

AU - Sorid, D.

PY - 2003/4

Y1 - 2003/4

N2 - We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A significant shift in the threshold voltage was attributed to an increase in the electron charge density in the MOSFET channel, resulting from an increase in the positive fixed charge at the native oxide surface. A numerical simulation supports this conclusion. It is speculated that the molecules protonate the surface of the SiO2 due to the higher acidity of the molecular groups compared to that of the native oxide. To assess the validity of this hypothesis a series of molecules with similar structure but with different acidities (pKa values) were investigated. Preliminary results showing the systematic variation of ΔVth and pKa are presented.

AB - We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A significant shift in the threshold voltage was attributed to an increase in the electron charge density in the MOSFET channel, resulting from an increase in the positive fixed charge at the native oxide surface. A numerical simulation supports this conclusion. It is speculated that the molecules protonate the surface of the SiO2 due to the higher acidity of the molecular groups compared to that of the native oxide. To assess the validity of this hypothesis a series of molecules with similar structure but with different acidities (pKa values) were investigated. Preliminary results showing the systematic variation of ΔVth and pKa are presented.

KW - Hybrid devices

KW - Molecular sensitivity

KW - SOI MOSFET

UR - http://www.scopus.com/inward/record.url?scp=0037391482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037391482&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00923-2

DO - 10.1016/S1386-9477(02)00923-2

M3 - Article

VL - 17

SP - 659

EP - 663

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -