TY - JOUR
T1 - Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing
AU - Kiraly, Brian
AU - Mannix, Andrew J.
AU - Jacobberger, Robert M.
AU - Fisher, Brandon L.
AU - Arnold, Michael S.
AU - Hersam, Mark C.
AU - Guisinger, Nathan P.
N1 - Funding Information:
This work was performed, in part, at the Center for Nanoscale Materials, a U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences User Facility under Contract No. DE-AC02-06CH11357. In addition, this work was supported by the Office of Naval Research (Grant No. N00014-17-1-2993) and the National Science Foundation Graduate Fellowship Program (DGE-1324585 and DGE-0824162). R.M.J. and M.S.A. acknowledge the support by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DESC0016007 for the graphene synthesis, and R.M.J. also acknowledges the support from the Department of Defense (DOD) Air Force Office of Scientific Research through the National Defense Science and Engineering Graduate Fellowship Program (No. 32 CFR 168a).
PY - 2018/11/19
Y1 - 2018/11/19
N2 - Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in graphene limits its utilization in electronic devices. To overcome this issue, researchers have attempted to chemically modify the pristine graphene lattice in order to engineer its electronic bandstructure. While significant progress has been achieved, aggressive chemistries are often employed which are difficult to pattern and control. In an effort to overcome this issue, here we utilize the well-defined van der Waals interface between crystalline Ge(110) and epitaxial graphene to template covalent chemistry. In particular, by annealing atomically pristine graphene-germanium interfaces synthesized by chemical vapor deposition under ultra-high vacuum conditions, chemical bonding is driven between the germanium surface and the graphene lattice. The resulting bonds act as charge scattering centers that are identified by scanning tunneling microscopy. The generation of atomic-scale defects is independently confirmed by Raman spectroscopy, revealing significant densities within the graphene lattice. The resulting chemically modified graphene has the potential to impact next-generation nanoelectronic applications.
AB - Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in graphene limits its utilization in electronic devices. To overcome this issue, researchers have attempted to chemically modify the pristine graphene lattice in order to engineer its electronic bandstructure. While significant progress has been achieved, aggressive chemistries are often employed which are difficult to pattern and control. In an effort to overcome this issue, here we utilize the well-defined van der Waals interface between crystalline Ge(110) and epitaxial graphene to template covalent chemistry. In particular, by annealing atomically pristine graphene-germanium interfaces synthesized by chemical vapor deposition under ultra-high vacuum conditions, chemical bonding is driven between the germanium surface and the graphene lattice. The resulting bonds act as charge scattering centers that are identified by scanning tunneling microscopy. The generation of atomic-scale defects is independently confirmed by Raman spectroscopy, revealing significant densities within the graphene lattice. The resulting chemically modified graphene has the potential to impact next-generation nanoelectronic applications.
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U2 - 10.1063/1.5053083
DO - 10.1063/1.5053083
M3 - Article
AN - SCOPUS:85056861249
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 213103
ER -