Early stages of plasma synthesis of diamond films

R. Meilunas, M. S. Wong, K. C. Sheng, Robert P. H. Chang, R. P. Van Duyne

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Abstract

The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x-ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.

Original languageEnglish
Pages (from-to)2204-2206
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number22
DOIs
Publication statusPublished - 1989

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Meilunas, R., Wong, M. S., Sheng, K. C., Chang, R. P. H., & Van Duyne, R. P. (1989). Early stages of plasma synthesis of diamond films. Applied Physics Letters, 54(22), 2204-2206. https://doi.org/10.1063/1.101124