Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, L. Lu, Y. H. Hwang, F. Ren, S. J. Pearton, Igor Lubomirsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages171-177
Number of pages7
Volume61
Edition4
DOIs
Publication statusPublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
CountryUnited States
CityOrlando
Period5/11/145/15/14

Fingerprint

Carrier transport
High electron mobility transistors
Transport properties
Dosimetry
Irradiation
Annealing
Voltage measurement
Induced currents
Electric current measurement
Gamma rays
Electron beams
Transistors
Activation energy
Recovery
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yadav, A., Schwarz, C., Shatkhin, M., Wang, L., Flitsiyan, E., Chernyak, L., ... Lubomirsky, I. (2014). Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. In ECS Transactions (4 ed., Vol. 61, pp. 171-177). Electrochemical Society Inc.. https://doi.org/10.1149/06104.0171ecst

Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. / Yadav, A.; Schwarz, C.; Shatkhin, M.; Wang, L.; Flitsiyan, E.; Chernyak, L.; Lu, L.; Hwang, Y. H.; Ren, F.; Pearton, S. J.; Lubomirsky, Igor.

ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. p. 171-177.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yadav, A, Schwarz, C, Shatkhin, M, Wang, L, Flitsiyan, E, Chernyak, L, Lu, L, Hwang, YH, Ren, F, Pearton, SJ & Lubomirsky, I 2014, Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. in ECS Transactions. 4 edn, vol. 61, Electrochemical Society Inc., pp. 171-177, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting, Orlando, United States, 5/11/14. https://doi.org/10.1149/06104.0171ecst
Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L et al. Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. In ECS Transactions. 4 ed. Vol. 61. Electrochemical Society Inc. 2014. p. 171-177 https://doi.org/10.1149/06104.0171ecst
Yadav, A. ; Schwarz, C. ; Shatkhin, M. ; Wang, L. ; Flitsiyan, E. ; Chernyak, L. ; Lu, L. ; Hwang, Y. H. ; Ren, F. ; Pearton, S. J. ; Lubomirsky, Igor. / Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. pp. 171-177
@inproceedings{ab064a8e2a6546689b4ad53dd9ab975f,
title = "Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors",
abstract = "AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.",
author = "A. Yadav and C. Schwarz and M. Shatkhin and L. Wang and E. Flitsiyan and L. Chernyak and L. Lu and Hwang, {Y. H.} and F. Ren and Pearton, {S. J.} and Igor Lubomirsky",
year = "2014",
doi = "10.1149/06104.0171ecst",
language = "English",
volume = "61",
pages = "171--177",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "4",

}

TY - GEN

T1 - Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

AU - Yadav, A.

AU - Schwarz, C.

AU - Shatkhin, M.

AU - Wang, L.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Lu, L.

AU - Hwang, Y. H.

AU - Ren, F.

AU - Pearton, S. J.

AU - Lubomirsky, Igor

PY - 2014

Y1 - 2014

N2 - AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

AB - AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

UR - http://www.scopus.com/inward/record.url?scp=84925063219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925063219&partnerID=8YFLogxK

U2 - 10.1149/06104.0171ecst

DO - 10.1149/06104.0171ecst

M3 - Conference contribution

VL - 61

SP - 171

EP - 177

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -