Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors

A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, L. Lu, Y. H. Hwang, F. Ren, S. J. Pearton, I. Lubomirsky

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200° C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

Original languageEnglish
Pages (from-to)171-177
Number of pages7
JournalECS Transactions
Volume61
Issue number4
DOIs
Publication statusPublished - Jan 1 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

ASJC Scopus subject areas

  • Engineering(all)

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    Yadav, A., Schwarz, C., Shatkhin, M., Wang, L., Flitsiyan, E., Chernyak, L., Lu, L., Hwang, Y. H., Ren, F., Pearton, S. J., & Lubomirsky, I. (2014). Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors. ECS Transactions, 61(4), 171-177. https://doi.org/10.1149/06104.0171ecst