Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu, Min Van Min, Xiang Liu, Eric Seelig, Robert P. H. Chang

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17 Citations (Scopus)


This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalChemical Physics Letters
Issue number1-2
Publication statusPublished - Mar 25 2002


ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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