Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu, Min Van Min, Xiang Liu, Eric Seelig, Robert P. H. Chang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalChemical Physics Letters
Volume355
Issue number1-2
DOIs
Publication statusPublished - Mar 25 2002

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Atomic layer epitaxy
Aluminum Oxide
atomic layer epitaxy
sapphire
Electric fields
electric fields
Epitaxial films
packing density
Substrates
Hydroxyl Radical

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method. / Liu, C. H.; Van Min, Min; Liu, Xiang; Seelig, Eric; Chang, Robert P. H.

In: Chemical Physics Letters, Vol. 355, No. 1-2, 25.03.2002, p. 43-47.

Research output: Contribution to journalArticle

Liu, C. H. ; Van Min, Min ; Liu, Xiang ; Seelig, Eric ; Chang, Robert P. H. / Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method. In: Chemical Physics Letters. 2002 ; Vol. 355, No. 1-2. pp. 43-47.
@article{53ed27719bac495a9bdb7cb9e3f3f555,
title = "Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method",
abstract = "This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.",
author = "Liu, {C. H.} and {Van Min}, Min and Xiang Liu and Eric Seelig and Chang, {Robert P. H.}",
year = "2002",
month = "3",
day = "25",
doi = "10.1016/S0009-2614(02)00162-8",
language = "English",
volume = "355",
pages = "43--47",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

AU - Liu, C. H.

AU - Van Min, Min

AU - Liu, Xiang

AU - Seelig, Eric

AU - Chang, Robert P. H.

PY - 2002/3/25

Y1 - 2002/3/25

N2 - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

AB - This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

UR - http://www.scopus.com/inward/record.url?scp=0037170887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037170887&partnerID=8YFLogxK

U2 - 10.1016/S0009-2614(02)00162-8

DO - 10.1016/S0009-2614(02)00162-8

M3 - Article

VL - 355

SP - 43

EP - 47

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 1-2

ER -