Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

C. H. Liu, Min Van Min, Xiang Liu, Eric Seelig, Robert P. H. Chang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0 0 0 1) sapphire substrates. The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalChemical Physics Letters
Volume355
Issue number1-2
DOIs
Publication statusPublished - Mar 25 2002

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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