Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Minghan Xian, Fan Ren, Stephen J. Pearton

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1 Citation (Scopus)

Abstract

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

Original languageEnglish
Article number045018
JournalECS Journal of Solid State Science and Technology
Volume9
Issue number4
DOIs
Publication statusPublished - Jan 5 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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