Effect of energetic ions on the stability of bond-center hydrogen in silicon

S. V S Nageswara Rao, S. K. Dixit, G. Lüpke, N. H. Tolk, Leonard C Feldman

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report an observation of low-temperature, athermal, ion-induced decay of infrared-active bond-center hydrogen (BCH) in silicon. Specifically, the infrared intensity of BCH is found to decay monotonically as a function of ion dose with a decay constant determined by the electronic energy deposited by each ion. Our data indicate that ion-induced decay of BCH results in a different final configuration when compared to the thermal decay process. These findings provide insight into the structure and stability of hydrogen related defects in silicon, and thus have implications for the reliability of state-of-the-art semiconductor devices, radiation damage, and ion-beam characterization studies of hydrogen containing solids.

Original languageEnglish
Article number235202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number23
DOIs
Publication statusPublished - Jun 14 2007

Fingerprint

Silicon
Hydrogen
Ions
silicon
decay
hydrogen
ions
Infrared radiation
Radiation damage
Semiconductor devices
semiconductor devices
radiation damage
Ion beams
ion beams
dosage
Defects
defects
configurations
electronics
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of energetic ions on the stability of bond-center hydrogen in silicon. / Nageswara Rao, S. V S; Dixit, S. K.; Lüpke, G.; Tolk, N. H.; Feldman, Leonard C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 23, 235202, 14.06.2007.

Research output: Contribution to journalArticle

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