Abstract
We report an observation of low-temperature, athermal, ion-induced decay of infrared-active bond-center hydrogen (BCH) in silicon. Specifically, the infrared intensity of BCH is found to decay monotonically as a function of ion dose with a decay constant determined by the electronic energy deposited by each ion. Our data indicate that ion-induced decay of BCH results in a different final configuration when compared to the thermal decay process. These findings provide insight into the structure and stability of hydrogen related defects in silicon, and thus have implications for the reliability of state-of-the-art semiconductor devices, radiation damage, and ion-beam characterization studies of hydrogen containing solids.
| Original language | English |
|---|---|
| Article number | 235202 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 75 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Jun 14 2007 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Effect of energetic ions on the stability of bond-center hydrogen in silicon. / Nageswara Rao, S. V S; Dixit, S. K.; Lüpke, G.; Tolk, N. H.; Feldman, Leonard C.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 23, 235202, 14.06.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of energetic ions on the stability of bond-center hydrogen in silicon
AU - Nageswara Rao, S. V S
AU - Dixit, S. K.
AU - Lüpke, G.
AU - Tolk, N. H.
AU - Feldman, Leonard C
PY - 2007/6/14
Y1 - 2007/6/14
N2 - We report an observation of low-temperature, athermal, ion-induced decay of infrared-active bond-center hydrogen (BCH) in silicon. Specifically, the infrared intensity of BCH is found to decay monotonically as a function of ion dose with a decay constant determined by the electronic energy deposited by each ion. Our data indicate that ion-induced decay of BCH results in a different final configuration when compared to the thermal decay process. These findings provide insight into the structure and stability of hydrogen related defects in silicon, and thus have implications for the reliability of state-of-the-art semiconductor devices, radiation damage, and ion-beam characterization studies of hydrogen containing solids.
AB - We report an observation of low-temperature, athermal, ion-induced decay of infrared-active bond-center hydrogen (BCH) in silicon. Specifically, the infrared intensity of BCH is found to decay monotonically as a function of ion dose with a decay constant determined by the electronic energy deposited by each ion. Our data indicate that ion-induced decay of BCH results in a different final configuration when compared to the thermal decay process. These findings provide insight into the structure and stability of hydrogen related defects in silicon, and thus have implications for the reliability of state-of-the-art semiconductor devices, radiation damage, and ion-beam characterization studies of hydrogen containing solids.
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U2 - 10.1103/PhysRevB.75.235202
DO - 10.1103/PhysRevB.75.235202
M3 - Article
AN - SCOPUS:34347374873
VL - 75
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 23
M1 - 235202
ER -