Effect of excess vacancy concentration on As and Sb doping in Si

M. Dalponte, M. C. Adam, H. I. Boudinov, L. V. Goncharova, T. Feng, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

Abstract

In defect engineering, defects are intentionally introduced in a substrate to modify dopant behaviour. In this work, we used high resolution depth profiling and electrical characterization to analyse As and Sb behaviour in Si substrates with and without excess vacancies. Vacancies were generated by nitrogen or oxygen ion pre-implantation prior to dopant (As or Sb) implantation. Separation by implanted oxygen (SIMOX) samples were also doped and analysed. The results obtained for Si without vacancies and SIMOX were similar in regard to dopant distribution, retention and their electrical characteristics. Vacancy-rich samples show different electrical characteristics and redistribution behaviour during annealing, attributed not just to the presence of vacancies but also to the ion used to create them. In the case of As doping, oxygen pre-implanted samples had a larger retained dose and less As interface accumulation, whereas for Sb doping, nitrogen pre-implanted samples presented a larger retained dose and less Sb interface accumulation. For both dopants, vacancy-rich samples had lower electrically active dopant concentrations, but better thermal stability of the activated dopants when compared with SIMOX and Si.

Original languageEnglish
Article number165106
JournalJournal of Physics D: Applied Physics
Volume42
Issue number16
DOIs
Publication statusPublished - 2009

Fingerprint

Vacancies
Doping (additives)
Oxygen
oxygen
implantation
Ion implantation
dosage
Nitrogen
nitrogen ions
defects
Ions
oxygen ions
Defects
Depth profiling
thermal stability
Substrates
engineering
nitrogen
annealing
Thermodynamic stability

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Dalponte, M., Adam, M. C., Boudinov, H. I., Goncharova, L. V., Feng, T., Garfunkel, E., & Gustafsson, T. (2009). Effect of excess vacancy concentration on As and Sb doping in Si. Journal of Physics D: Applied Physics, 42(16), [165106]. https://doi.org/10.1088/0022-3727/42/16/165106

Effect of excess vacancy concentration on As and Sb doping in Si. / Dalponte, M.; Adam, M. C.; Boudinov, H. I.; Goncharova, L. V.; Feng, T.; Garfunkel, Eric; Gustafsson, T.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 16, 165106, 2009.

Research output: Contribution to journalArticle

Dalponte, M, Adam, MC, Boudinov, HI, Goncharova, LV, Feng, T, Garfunkel, E & Gustafsson, T 2009, 'Effect of excess vacancy concentration on As and Sb doping in Si', Journal of Physics D: Applied Physics, vol. 42, no. 16, 165106. https://doi.org/10.1088/0022-3727/42/16/165106
Dalponte, M. ; Adam, M. C. ; Boudinov, H. I. ; Goncharova, L. V. ; Feng, T. ; Garfunkel, Eric ; Gustafsson, T. / Effect of excess vacancy concentration on As and Sb doping in Si. In: Journal of Physics D: Applied Physics. 2009 ; Vol. 42, No. 16.
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