Abstract
We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 1600 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| DOIs | |
| Publication status | Published - 1995 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides. / Green, M. L.; Brasen, D.; Feldman, Leonard C; Lennard, W.; Tang, H. T.
In: Applied Physics Letters, Vol. 67, 1995, p. 1600.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides
AU - Green, M. L.
AU - Brasen, D.
AU - Feldman, Leonard C
AU - Lennard, W.
AU - Tang, H. T.
PY - 1995
Y1 - 1995
N2 - We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.
AB - We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.
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U2 - 10.1063/1.114952
DO - 10.1063/1.114952
M3 - Article
VL - 67
SP - 1600
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -