Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

M. L. Green, D. Brasen, Leonard C Feldman, W. Lennard, H. T. Tang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.

Original languageEnglish
Pages (from-to)1600
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

Fingerprint

nitrogen
oxides
kinetics
oxidation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides. / Green, M. L.; Brasen, D.; Feldman, Leonard C; Lennard, W.; Tang, H. T.

In: Applied Physics Letters, Vol. 67, 1995, p. 1600.

Research output: Contribution to journalArticle

Green, M. L. ; Brasen, D. ; Feldman, Leonard C ; Lennard, W. ; Tang, H. T. / Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides. In: Applied Physics Letters. 1995 ; Vol. 67. pp. 1600.
@article{2a6309972ca04bcc84199e552b438f9f,
title = "Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides",
abstract = "We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.",
author = "Green, {M. L.} and D. Brasen and Feldman, {Leonard C} and W. Lennard and Tang, {H. T.}",
year = "1995",
doi = "10.1063/1.114952",
language = "English",
volume = "67",
pages = "1600",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

AU - Green, M. L.

AU - Brasen, D.

AU - Feldman, Leonard C

AU - Lennard, W.

AU - Tang, H. T.

PY - 1995

Y1 - 1995

N2 - We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.

AB - We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.

UR - http://www.scopus.com/inward/record.url?scp=0000997123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000997123&partnerID=8YFLogxK

U2 - 10.1063/1.114952

DO - 10.1063/1.114952

M3 - Article

VL - 67

SP - 1600

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -