Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

M. L. Green, D. Brasen, L. C. Feldman, W. Lennard, H. T. Tang

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27 Citations (Scopus)


We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.

Original languageEnglish
Pages (from-to)1600
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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