Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

M. L. Green, D. Brasen, L. C. Feldman, W. Lennard, H. T. Tang

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27 Citations (Scopus)

Abstract

We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800-1200°C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000°C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000°C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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