Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, Leonard C Feldman, R. A. Weller

Research output: Contribution to journalArticle

335 Citations (Scopus)

Abstract

Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.

Original languageEnglish
Pages (from-to)1713-1715
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number13
Publication statusPublished - Mar 27 2000

Fingerprint

nitric oxide
silicon carbides
traps
annealing
metal oxide semiconductors
electrical measurement
capacitors
capacitance
aluminum
nitrogen
oxidation
oxides
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., ... Weller, R. A. (2000). Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Applied Physics Letters, 76(13), 1713-1715.

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. / Chung, G. Y.; Tin, C. C.; Williams, J. R.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Feldman, Leonard C; Weller, R. A.

In: Applied Physics Letters, Vol. 76, No. 13, 27.03.2000, p. 1713-1715.

Research output: Contribution to journalArticle

Chung, GY, Tin, CC, Williams, JR, McDonald, K, Di Ventra, M, Pantelides, ST, Feldman, LC & Weller, RA 2000, 'Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide', Applied Physics Letters, vol. 76, no. 13, pp. 1713-1715.
Chung GY, Tin CC, Williams JR, McDonald K, Di Ventra M, Pantelides ST et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Applied Physics Letters. 2000 Mar 27;76(13):1713-1715.
Chung, G. Y. ; Tin, C. C. ; Williams, J. R. ; McDonald, K. ; Di Ventra, M. ; Pantelides, S. T. ; Feldman, Leonard C ; Weller, R. A. / Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. In: Applied Physics Letters. 2000 ; Vol. 76, No. 13. pp. 1713-1715.
@article{9c5d5147c264452f81fb892c8c998ef4,
title = "Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide",
abstract = "Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.",
author = "Chung, {G. Y.} and Tin, {C. C.} and Williams, {J. R.} and K. McDonald and {Di Ventra}, M. and Pantelides, {S. T.} and Feldman, {Leonard C} and Weller, {R. A.}",
year = "2000",
month = "3",
day = "27",
language = "English",
volume = "76",
pages = "1713--1715",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Williams, J. R.

AU - McDonald, K.

AU - Di Ventra, M.

AU - Pantelides, S. T.

AU - Feldman, Leonard C

AU - Weller, R. A.

PY - 2000/3/27

Y1 - 2000/3/27

N2 - Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.

AB - Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.

UR - http://www.scopus.com/inward/record.url?scp=0000397834&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000397834&partnerID=8YFLogxK

M3 - Article

VL - 76

SP - 1713

EP - 1715

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -