Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Mar 27 2000|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)