Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, Leonard C Feldman, R. A. Weller

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Abstract

Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.

Original languageEnglish
Pages (from-to)1713-1715
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number13
Publication statusPublished - Mar 27 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., ... Weller, R. A. (2000). Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Applied Physics Letters, 76(13), 1713-1715.