The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)