Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

S. Dhar, Y. W. Song, Leonard C Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, Eric Garfunkel

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Abstract

The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.

Original languageEnglish
Pages (from-to)1498-1500
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - Mar 1 2004

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nitric oxide
traps
conduction
annealing
oxides
ion scattering
trapping
nitrogen
defects
scattering
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. / Dhar, S.; Song, Y. W.; Feldman, Leonard C; Isaacs-Smith, T.; Tin, C. C.; Williams, J. R.; Chung, G.; Nishimura, T.; Starodub, D.; Gustafsson, T.; Garfunkel, Eric.

In: Applied Physics Letters, Vol. 84, No. 9, 01.03.2004, p. 1498-1500.

Research output: Contribution to journalArticle

Dhar, S, Song, YW, Feldman, LC, Isaacs-Smith, T, Tin, CC, Williams, JR, Chung, G, Nishimura, T, Starodub, D, Gustafsson, T & Garfunkel, E 2004, 'Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface', Applied Physics Letters, vol. 84, no. 9, pp. 1498-1500. https://doi.org/10.1063/1.1651325
Dhar, S. ; Song, Y. W. ; Feldman, Leonard C ; Isaacs-Smith, T. ; Tin, C. C. ; Williams, J. R. ; Chung, G. ; Nishimura, T. ; Starodub, D. ; Gustafsson, T. ; Garfunkel, Eric. / Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. In: Applied Physics Letters. 2004 ; Vol. 84, No. 9. pp. 1498-1500.
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AU - Feldman, Leonard C

AU - Isaacs-Smith, T.

AU - Tin, C. C.

AU - Williams, J. R.

AU - Chung, G.

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