Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

S. Dhar, Y. W. Song, Leonard C Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, Eric Garfunkel

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Abstract

The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.

Original languageEnglish
Pages (from-to)1498-1500
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - Mar 1 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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