Effect of nitrogen on band alignment in HfSiON gate dielectrics

S. Sayan, N. V. Nguyen, J. Ehrstein, J. J. Chambers, M. R. Visokay, M. A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D. A. Fischer, M. Paunescu, O. Celik, Eric Garfunkel

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.

Original languageEnglish
Article number212905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number21
DOIs
Publication statusPublished - 2005

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alignment
nitrogen
x ray absorption
ellipsometry
CMOS
conduction bands
leakage
photoelectric emission
physical properties
electrical properties
crystallization
valence
oxygen
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sayan, S., Nguyen, N. V., Ehrstein, J., Chambers, J. J., Visokay, M. R., Quevedo-Lopez, M. A., ... Garfunkel, E. (2005). Effect of nitrogen on band alignment in HfSiON gate dielectrics. Applied Physics Letters, 87(21), 1-3. [212905]. https://doi.org/10.1063/1.2135390

Effect of nitrogen on band alignment in HfSiON gate dielectrics. / Sayan, S.; Nguyen, N. V.; Ehrstein, J.; Chambers, J. J.; Visokay, M. R.; Quevedo-Lopez, M. A.; Colombo, L.; Yoder, D.; Levin, I.; Fischer, D. A.; Paunescu, M.; Celik, O.; Garfunkel, Eric.

In: Applied Physics Letters, Vol. 87, No. 21, 212905, 2005, p. 1-3.

Research output: Contribution to journalArticle

Sayan, S, Nguyen, NV, Ehrstein, J, Chambers, JJ, Visokay, MR, Quevedo-Lopez, MA, Colombo, L, Yoder, D, Levin, I, Fischer, DA, Paunescu, M, Celik, O & Garfunkel, E 2005, 'Effect of nitrogen on band alignment in HfSiON gate dielectrics', Applied Physics Letters, vol. 87, no. 21, 212905, pp. 1-3. https://doi.org/10.1063/1.2135390
Sayan S, Nguyen NV, Ehrstein J, Chambers JJ, Visokay MR, Quevedo-Lopez MA et al. Effect of nitrogen on band alignment in HfSiON gate dielectrics. Applied Physics Letters. 2005;87(21):1-3. 212905. https://doi.org/10.1063/1.2135390
Sayan, S. ; Nguyen, N. V. ; Ehrstein, J. ; Chambers, J. J. ; Visokay, M. R. ; Quevedo-Lopez, M. A. ; Colombo, L. ; Yoder, D. ; Levin, I. ; Fischer, D. A. ; Paunescu, M. ; Celik, O. ; Garfunkel, Eric. / Effect of nitrogen on band alignment in HfSiON gate dielectrics. In: Applied Physics Letters. 2005 ; Vol. 87, No. 21. pp. 1-3.
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AU - Quevedo-Lopez, M. A.

AU - Colombo, L.

AU - Yoder, D.

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AU - Fischer, D. A.

AU - Paunescu, M.

AU - Celik, O.

AU - Garfunkel, Eric

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