Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures

Xiuyan Li, Sang Soo Lee, Mengjun Li, Alexei Ermakov, Jonnathan Medina-Ramos, Timothy T. Fister, Voshadhi Amarasinghe, Torgny Gustafsson, Eric Garfunkel, Paul Fenter, Leonard C Feldman

Research output: Contribution to journalArticle

Abstract

The electron density and physical stress at the thermally oxidized SiC/SiO2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and in-situ stress measurement. There is no evidence for residual carbon species at the SiO2/SiC. Instead, a ∼1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiOx, 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a chemical interaction model is proposed to explain the effect of the nitrogen in terms of both stress reduction and elemental control of the dielectric/SiC interface, resulting in a higher quality gate stack on SiC.

Original languageEnglish
Article number131601
JournalApplied Physics Letters
Volume113
Issue number13
DOIs
Publication statusPublished - Sep 24 2018

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passivity
nitrogen
stress measurement
Raman spectra
reflectance
carbon
electronics
x rays
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures. / Li, Xiuyan; Lee, Sang Soo; Li, Mengjun; Ermakov, Alexei; Medina-Ramos, Jonnathan; Fister, Timothy T.; Amarasinghe, Voshadhi; Gustafsson, Torgny; Garfunkel, Eric; Fenter, Paul; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 113, No. 13, 131601, 24.09.2018.

Research output: Contribution to journalArticle

Li, X, Lee, SS, Li, M, Ermakov, A, Medina-Ramos, J, Fister, TT, Amarasinghe, V, Gustafsson, T, Garfunkel, E, Fenter, P & Feldman, LC 2018, 'Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures', Applied Physics Letters, vol. 113, no. 13, 131601. https://doi.org/10.1063/1.5048220
Li, Xiuyan ; Lee, Sang Soo ; Li, Mengjun ; Ermakov, Alexei ; Medina-Ramos, Jonnathan ; Fister, Timothy T. ; Amarasinghe, Voshadhi ; Gustafsson, Torgny ; Garfunkel, Eric ; Fenter, Paul ; Feldman, Leonard C. / Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures. In: Applied Physics Letters. 2018 ; Vol. 113, No. 13.
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AU - Medina-Ramos, Jonnathan

AU - Fister, Timothy T.

AU - Amarasinghe, Voshadhi

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