Effect of NO annealing on 6H- and 4H-SiC MOS interface states

A. F. Basile; J. Rozen; X. D. Chen; S. Dhar; J. R. Williams; L. C. Feldman; P. M. Mooney

doi:10.4028/www.scientific.net/MSF.645-648.499

Effect of NO annealing on 6H- and 4H-SiC MOS interface states

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The electrical properties of the SiC/SiO₂ interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2009
Subtitle of host publication	ICSCRM 2009
Publisher	Trans Tech Publications Ltd
Pages	499-502
Number of pages	4
ISBN (Print)	0878492798, 9780878492794
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.645-648.499
Publication status	Published - Jan 1 2010
Event	13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: Oct 11 2009 → Oct 16 2009

Publication series

Name	Materials Science Forum
Volume	645-648
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Country	Germany
City	Nurnberg
Period	10/11/09 → 10/16/09

Keywords

4H-SiC
6H-SiC
Electron trapping
Interface states
NO annealing
Silicon dioxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Effect of NO annealing on 6H- and 4H-SiC MOS interface states. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 499-502). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.499

Effect of NO annealing on 6H- and 4H-SiC MOS interface states. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, L. C.; Mooney, P. M.

Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. p. 499-502 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2010, Effect of NO annealing on 6H- and 4H-SiC MOS interface states. in Silicon Carbide and Related Materials 2009: ICSCRM 2009. Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 499-502, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.499

@inproceedings{a51f866b1b4647c183afe9b3e60690bd,

title = "Effect of NO annealing on 6H- and 4H-SiC MOS interface states",

abstract = "The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.",

keywords = "4H-SiC, 6H-SiC, Electron trapping, Interface states, NO annealing, Silicon dioxide",

author = "Basile, {A. F.} and J. Rozen and Chen, {X. D.} and S. Dhar and Williams, {J. R.} and Feldman, {L. C.} and Mooney, {P. M.}",

year = "2010",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/MSF.645-648.499",

language = "English",

isbn = "0878492798",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "499--502",

booktitle = "Silicon Carbide and Related Materials 2009",

note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",

}

TY - GEN

T1 - Effect of NO annealing on 6H- and 4H-SiC MOS interface states

AU - Basile, A. F.

AU - Rozen, J.

AU - Chen, X. D.

AU - Dhar, S.

AU - Williams, J. R.

AU - Feldman, L. C.

AU - Mooney, P. M.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

AB - The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

KW - 4H-SiC

KW - 6H-SiC

KW - Electron trapping

KW - Interface states

KW - NO annealing

KW - Silicon dioxide

UR - http://www.scopus.com/inward/record.url?scp=77955454903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955454903&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.645-648.499

DO - 10.4028/www.scientific.net/MSF.645-648.499

M3 - Conference contribution

AN - SCOPUS:77955454903

SN - 0878492798

SN - 9780878492794

T3 - Materials Science Forum

SP - 499

EP - 502

BT - Silicon Carbide and Related Materials 2009

PB - Trans Tech Publications Ltd

T2 - 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009

Y2 - 11 October 2009 through 16 October 2009

ER -