Abstract
The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 499-502 |
| Number of pages | 4 |
| Volume | 645-648 |
| ISBN (Print) | 0878492798, 9780878492794 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: Oct 11 2009 → Oct 16 2009 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 645-648 |
| ISSN (Print) | 02555476 |
Other
| Other | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 |
|---|---|
| Country | Germany |
| City | Nurnberg |
| Period | 10/11/09 → 10/16/09 |
Fingerprint
Keywords
- 4H-SiC
- 6H-SiC
- Electron trapping
- Interface states
- NO annealing
- Silicon dioxide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Effect of NO annealing on 6H- and 4H-SiC MOS interface states. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.
Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 499-502 (Materials Science Forum; Vol. 645-648).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of NO annealing on 6H- and 4H-SiC MOS interface states
AU - Basile, A. F.
AU - Rozen, J.
AU - Chen, X. D.
AU - Dhar, S.
AU - Williams, J. R.
AU - Feldman, Leonard C
AU - Mooney, P. M.
PY - 2010
Y1 - 2010
N2 - The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.
AB - The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.
KW - 4H-SiC
KW - 6H-SiC
KW - Electron trapping
KW - Interface states
KW - NO annealing
KW - Silicon dioxide
UR - http://www.scopus.com/inward/record.url?scp=77955454903&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955454903&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.645-648.499
DO - 10.4028/www.scientific.net/MSF.645-648.499
M3 - Conference contribution
AN - SCOPUS:77955454903
SN - 0878492798
SN - 9780878492794
VL - 645-648
T3 - Materials Science Forum
SP - 499
EP - 502
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
ER -