Effect of NO annealing on 6H- and 4H-SiC MOS interface states

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, Leonard C Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages499-502
Number of pages4
Volume645-648
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Interface states
traps
Annealing
Oxidation
Deep level transient spectroscopy
annealing
Nitridation
Conduction bands
oxidation
Electric properties
Capacitance
Semiconductor materials
absorption cross sections
Defects
conduction bands
capacitance
electrical properties
energy
defects
Temperature

Keywords

  • 4H-SiC
  • 6H-SiC
  • Electron trapping
  • Interface states
  • NO annealing
  • Silicon dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Effect of NO annealing on 6H- and 4H-SiC MOS interface states. In Materials Science Forum (Vol. 645-648, pp. 499-502). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.499

Effect of NO annealing on 6H- and 4H-SiC MOS interface states. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.

Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 499-502 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2010, Effect of NO annealing on 6H- and 4H-SiC MOS interface states. in Materials Science Forum. vol. 645-648, Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 499-502, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.499
Basile AF, Rozen J, Chen XD, Dhar S, Williams JR, Feldman LC et al. Effect of NO annealing on 6H- and 4H-SiC MOS interface states. In Materials Science Forum. Vol. 645-648. Trans Tech Publications Ltd. 2010. p. 499-502. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.499
Basile, A. F. ; Rozen, J. ; Chen, X. D. ; Dhar, S. ; Williams, J. R. ; Feldman, Leonard C ; Mooney, P. M. / Effect of NO annealing on 6H- and 4H-SiC MOS interface states. Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. pp. 499-502 (Materials Science Forum).
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