@inproceedings{a51f866b1b4647c183afe9b3e60690bd,
title = "Effect of NO annealing on 6H- and 4H-SiC MOS interface states",
abstract = "The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.",
keywords = "4H-SiC, 6H-SiC, Electron trapping, Interface states, NO annealing, Silicon dioxide",
author = "Basile, {A. F.} and J. Rozen and Chen, {X. D.} and S. Dhar and Williams, {J. R.} and Feldman, {L. C.} and Mooney, {P. M.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.499",
language = "English",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "499--502",
booktitle = "Silicon Carbide and Related Materials 2009",
}