Effect of NO annealing on 6H- and 4H-SiC MOS interface states

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

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