Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance

Choongik Kim, Antonio Facchetti, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pentacene is one of the most studied semiconductor for organic thin-film transistors (OTFTs), and enhanced understanding of pentacene-based TFTs has significantly advanced the organic electronics. We report here the crucial effect of the polymer gate dielectric glass transition temperature (T g) on pentacene film growth mode, microstructure, and the resulting TFT performance. Nanoscopically-confmed thin polymer films are known to exhibit reduced glass-transition temperatures versus the corresponding bulk values, and we demonstrate here that pentacene films grown on polymer gate dielectrics at temperatures well below their bulk Tg exhibit morphological/ microstructural transitions and OTFT performance discontinuities at well-defined growth temperatures [defined as the surface Tg, or Tg(s)] characteristic of the underlying polymer structure and independent of the film thickness. The results argue mat realistic OTFT response must take into account this fundamental polymer property, and that TFT measurements represent a new probe of polymer surface thermal properties.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages19-24
Number of pages6
Volume1091
Publication statusPublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 24 2008Mar 28 2008

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/24/083/28/08

Fingerprint

Gate dielectrics
viscoelasticity
Viscoelasticity
Thin film transistors
Polymers
transistors
polymers
thin films
glass transition temperature
Growth temperature
Film growth
Polymer films
Film thickness
Electronic equipment
Thermodynamic properties
pentacene
Semiconductor materials
discontinuity
film thickness
thermodynamic properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kim, C., Facchetti, A., & Marks, T. J. (2008). Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance. In Materials Research Society Symposium Proceedings (Vol. 1091, pp. 19-24)

Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance. / Kim, Choongik; Facchetti, Antonio; Marks, Tobin J.

Materials Research Society Symposium Proceedings. Vol. 1091 2008. p. 19-24.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, C, Facchetti, A & Marks, TJ 2008, Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance. in Materials Research Society Symposium Proceedings. vol. 1091, pp. 19-24, 2008 MRS Spring Meeting, San Francisco, CA, United States, 3/24/08.
Kim C, Facchetti A, Marks TJ. Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance. In Materials Research Society Symposium Proceedings. Vol. 1091. 2008. p. 19-24
Kim, Choongik ; Facchetti, Antonio ; Marks, Tobin J. / Effect of polymer gate dielectric surface viscoelasticity on pentacene thin-film transistor performance. Materials Research Society Symposium Proceedings. Vol. 1091 2008. pp. 19-24
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