Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

Chao Yang Lu, James A. Cooper, Takashi Tsuji, Gilyong Chung, John R. Williams, Kyle McDonald, Leonard C Feldman

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include i) implant anneal temperature and ambient ii) oxidation procedure iii) postoxidation annealing in nitric oxide (NO) iv) type of gate material and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.

Original languageEnglish
Pages (from-to)1582-1588
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume50
Issue number7
DOIs
Publication statusPublished - 2003

Fingerprint

Electron mobility
Nitric oxide
nitric oxide
electron mobility
ambient temperature
Nitric Oxide
field effect transistors
Inversion layers
Ohmic contacts
Temperature
Oxides
temperature
electric contacts
Annealing
inversions
Oxidation
temperature dependence
oxidation
annealing
oxides

Keywords

  • Mobility
  • MOSFET
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface. / Lu, Chao Yang; Cooper, James A.; Tsuji, Takashi; Chung, Gilyong; Williams, John R.; McDonald, Kyle; Feldman, Leonard C.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 7, 2003, p. 1582-1588.

Research output: Contribution to journalArticle

Lu, Chao Yang ; Cooper, James A. ; Tsuji, Takashi ; Chung, Gilyong ; Williams, John R. ; McDonald, Kyle ; Feldman, Leonard C. / Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface. In: IEEE Transactions on Electron Devices. 2003 ; Vol. 50, No. 7. pp. 1582-1588.
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AU - McDonald, Kyle

AU - Feldman, Leonard C

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