We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include i) implant anneal temperature and ambient ii) oxidation procedure iii) postoxidation annealing in nitric oxide (NO) iv) type of gate material and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.
- Silicon carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering