Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

C. Y. Lu; J. A. Cooper; G. Y. Chung; J. R. Williams; K. McDonald; L. C. Feldman

doi:10.4028/www.scientific.net/MSF.389-393.977

Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

C. Y. Lu, J. A. Cooper, G. Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C. and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gale material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	977-980
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.977
Publication status	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: Oct 28 2001 → Nov 2 2001

Publication series

Name	Materials Science Forum
Volume	389-393
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country	Japan
City	Tsukuba
Period	10/28/01 → 11/2/01

Keywords

Inversion
MOSFETs
Mobility
NO annealing
Process
SiC

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Lu, C. Y., Cooper, J. A., Chung, G. Y., Williams, J. R., McDonald, K., & Feldman, L. C. (2002). Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 977-980). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.977

Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. / Lu, C. Y.; Cooper, J. A.; Chung, G. Y.; Williams, J. R.; McDonald, K.; Feldman, L. C.

Silicon Carbide and Related Materials 2001. ed. / S. Yoshida; S. Nishino; H. Harima; T. Kimoto. Trans Tech Publications Ltd, 2002. p. 977-980 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lu, CY, Cooper, JA, Chung, GY, Williams, JR, McDonald, K & Feldman, LC 2002, Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 977-980, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 10/28/01. https://doi.org/10.4028/www.scientific.net/MSF.389-393.977

Lu CY, Cooper JA, Chung GY, Williams JR, McDonald K, Feldman LC. Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. In Yoshida S, Nishino S, Harima H, Kimoto T, editors, Silicon Carbide and Related Materials 2001. Trans Tech Publications Ltd. 2002. p. 977-980. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.389-393.977

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title = "Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities",

abstract = "We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C. and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gale material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.",

keywords = "Inversion, MOSFETs, Mobility, NO annealing, Process, SiC",

author = "Lu, {C. Y.} and Cooper, {J. A.} and Chung, {G. Y.} and Williams, {J. R.} and K. McDonald and Feldman, {L. C.}",

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AU - McDonald, K.

AU - Feldman, L. C.

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AB - We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C. and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gale material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

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KW - Mobility

KW - NO annealing

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Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

Abstract

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Keywords

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