@inproceedings{e58a79f9b55648558fcb4ae5d584c78d,
title = "Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities",
abstract = "We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C. and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gale material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.",
keywords = "Inversion, MOSFETs, Mobility, NO annealing, Process, SiC",
author = "Lu, {C. Y.} and Cooper, {J. A.} and Chung, {G. Y.} and Williams, {J. R.} and K. McDonald and Feldman, {L. C.}",
year = "2002",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.389-393.977",
language = "English",
isbn = "9780878498949",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "977--980",
editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",
booktitle = "Silicon Carbide and Related Materials 2001",
note = "International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",
}