Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

C. Y. Lu, J. A. Cooper, G. Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C. and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gale material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages977-980
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - Jan 1 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

Keywords

  • Inversion
  • MOSFETs
  • Mobility
  • NO annealing
  • Process
  • SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lu, C. Y., Cooper, J. A., Chung, G. Y., Williams, J. R., McDonald, K., & Feldman, L. C. (2002). Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 977-980). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.977