Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

C. Y. Lu, J. A. Cooper, G. Y. Chung, J. R. Williams, K. McDonald, Leonard C Feldman

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C, and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gate material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

Original languageEnglish
Pages (from-to)977-980
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number2
Publication statusPublished - 2002

Fingerprint

Polysilicon
Silicon carbide
silicon carbides
field effect transistors
Inversion layers
Electron mobility
Nitric oxide
Nitric Oxide
nitric oxide
electron mobility
Oxidation
inversions
oxidation
Temperature
silicon carbide
temperature

Keywords

  • Inversion
  • Mobility
  • MOSFETs
  • NO Annealing
  • Process
  • SiC

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Lu, C. Y., Cooper, J. A., Chung, G. Y., Williams, J. R., McDonald, K., & Feldman, L. C. (2002). Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. Materials Science Forum, 389-393(2), 977-980.

Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. / Lu, C. Y.; Cooper, J. A.; Chung, G. Y.; Williams, J. R.; McDonald, K.; Feldman, Leonard C.

In: Materials Science Forum, Vol. 389-393, No. 2, 2002, p. 977-980.

Research output: Contribution to journalArticle

Lu, CY, Cooper, JA, Chung, GY, Williams, JR, McDonald, K & Feldman, LC 2002, 'Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities', Materials Science Forum, vol. 389-393, no. 2, pp. 977-980.
Lu CY, Cooper JA, Chung GY, Williams JR, McDonald K, Feldman LC. Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. Materials Science Forum. 2002;389-393(2):977-980.
Lu, C. Y. ; Cooper, J. A. ; Chung, G. Y. ; Williams, J. R. ; McDonald, K. ; Feldman, Leonard C. / Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 2. pp. 977-980.
@article{e58a79f9b55648558fcb4ae5d584c78d,
title = "Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities",
abstract = "We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C, and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gate material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.",
keywords = "Inversion, Mobility, MOSFETs, NO Annealing, Process, SiC",
author = "Lu, {C. Y.} and Cooper, {J. A.} and Chung, {G. Y.} and Williams, {J. R.} and K. McDonald and Feldman, {Leonard C}",
year = "2002",
language = "English",
volume = "389-393",
pages = "977--980",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "2",

}

TY - JOUR

T1 - Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities

AU - Lu, C. Y.

AU - Cooper, J. A.

AU - Chung, G. Y.

AU - Williams, J. R.

AU - McDonald, K.

AU - Feldman, Leonard C

PY - 2002

Y1 - 2002

N2 - We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C, and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gate material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

AB - We report a comprehensive investigation on the effects of process variations on the inversion layer electron mobility of n-channel MOSFETs in 4H SiC. Experimental results show that: (1) a post-oxidation anneal in nitric oxide (NO) significantly increases mobility, (2) implant anneals at temperatures ≤ 1400 °C, polysilicon depositions at 900 °C, and contact anneals at 850 °C have no significant negative effect on channel mobility, and (3) gate material and deposition method (LPCVD polysilicon vs. sputtered Mo) has no significant effect on channel mobility.

KW - Inversion

KW - Mobility

KW - MOSFETs

KW - NO Annealing

KW - Process

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0036430577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036430577&partnerID=8YFLogxK

M3 - Article

VL - 389-393

SP - 977

EP - 980

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - 2

ER -