Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Gang Liu, Yi Xu, Can Xu, Alberto Basile, Feng Wang, Sarit Dhar, Edward Conrad, Patricia Mooney, Torgny Gustafsson, Leonard C Feldman

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 2¯ 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.

Original languageEnglish
Pages (from-to)30-34
Number of pages5
JournalApplied Surface Science
Volume324
DOIs
Publication statusPublished - Jan 1 2015

Fingerprint

Inversion layers
Reactive ion etching
Hydrogen
Crystal structure
Annealing
Semiconductor materials
Recovery
Degradation
Processing

Keywords

  • 4H-SiC
  • DLTS
  • Hydrogen etching
  • RIE

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery. / Liu, Gang; Xu, Yi; Xu, Can; Basile, Alberto; Wang, Feng; Dhar, Sarit; Conrad, Edward; Mooney, Patricia; Gustafsson, Torgny; Feldman, Leonard C.

In: Applied Surface Science, Vol. 324, 01.01.2015, p. 30-34.

Research output: Contribution to journalArticle

Liu, G, Xu, Y, Xu, C, Basile, A, Wang, F, Dhar, S, Conrad, E, Mooney, P, Gustafsson, T & Feldman, LC 2015, 'Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery', Applied Surface Science, vol. 324, pp. 30-34. https://doi.org/10.1016/j.apsusc.2014.10.113
Liu, Gang ; Xu, Yi ; Xu, Can ; Basile, Alberto ; Wang, Feng ; Dhar, Sarit ; Conrad, Edward ; Mooney, Patricia ; Gustafsson, Torgny ; Feldman, Leonard C. / Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery. In: Applied Surface Science. 2015 ; Vol. 324. pp. 30-34.
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