Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Gang Liu, Yi Xu, Can Xu, Alberto Basile, Feng Wang, Sarit Dhar, Edward Conrad, Patricia Mooney, Torgny Gustafsson, Leonard C Feldman

Research output: Contribution to journalArticle

6 Citations (Scopus)


We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 2¯ 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.

Original languageEnglish
Pages (from-to)30-34
Number of pages5
JournalApplied Surface Science
Publication statusPublished - Jan 1 2015



  • 4H-SiC
  • DLTS
  • Hydrogen etching
  • RIE

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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