Effects of annealing on the structure and photoluminescence of ZnO thin films

Jinzhong Wang, Guotong Du, Xinqiang Wang, Wei Yan, Yan Ma, Xiuying Jiang, Shuren Yang, Dingsan Gao, Xiang Liu, Hui Cao, Junying Xu, Robert P. H. Chang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.

Original languageEnglish
Pages (from-to)178-180
Number of pages3
JournalGuangxue Xuebao/Acta Optica Sinica
Volume22
Issue number2
Publication statusPublished - Feb 2002

Keywords

  • Photoluminescence
  • Plasma-assisted metal-organic chemical vapor deposition
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

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    Wang, J., Du, G., Wang, X., Yan, W., Ma, Y., Jiang, X., Yang, S., Gao, D., Liu, X., Cao, H., Xu, J., & Chang, R. P. H. (2002). Effects of annealing on the structure and photoluminescence of ZnO thin films. Guangxue Xuebao/Acta Optica Sinica, 22(2), 178-180.