Effects of annealing on the structure and photoluminescence of ZnO thin films

Jinzhong Wang; Guotong Du; Xinqiang Wang; Wei Yan; Yan Ma; Xiuying Jiang; Shuren Yang; Dingsan Gao; Xiang Liu; Hui Cao; Junying Xu; Robert P. H. Chang

Effects of annealing on the structure and photoluminescence of ZnO thin films

Jinzhong Wang, Guotong Du, Xinqiang Wang, Wei Yan, Yan Ma, Xiuying Jiang, Shuren Yang, Dingsan Gao, Xiang Liu, Hui Cao, Junying Xu, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.

Original language	English
Pages (from-to)	178-180
Number of pages	3
Journal	Guangxue Xuebao/Acta Optica Sinica
Volume	22
Issue number	2
Publication status	Published - Feb 2002

Keywords

Photoluminescence
Plasma-assisted metal-organic chemical vapor deposition
X-ray diffraction

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy(all)
Atomic and Molecular Physics, and Optics

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Effects of annealing on the structure and photoluminescence of ZnO thin films. / Wang, Jinzhong; Du, Guotong; Wang, Xinqiang; Yan, Wei; Ma, Yan; Jiang, Xiuying; Yang, Shuren; Gao, Dingsan; Liu, Xiang; Cao, Hui; Xu, Junying; Chang, Robert P. H.

In: Guangxue Xuebao/Acta Optica Sinica, Vol. 22, No. 2, 02.2002, p. 178-180.

Research output: Contribution to journal › Article › peer-review

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abstract = "ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.",

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AU - Wang, Jinzhong

AU - Du, Guotong

AU - Wang, Xinqiang

AU - Yan, Wei

AU - Ma, Yan

AU - Jiang, Xiuying

AU - Yang, Shuren

AU - Gao, Dingsan

AU - Liu, Xiang

AU - Cao, Hui

AU - Xu, Junying

AU - Chang, Robert P. H.

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N2 - ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.

AB - ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.

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KW - Plasma-assisted metal-organic chemical vapor deposition

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