Abstract
ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.
| Original language | English |
|---|---|
| Pages (from-to) | 178-180 |
| Number of pages | 3 |
| Journal | Guangxue Xuebao/Acta Optica Sinica |
| Volume | 22 |
| Issue number | 2 |
| Publication status | Published - Feb 2002 |
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Keywords
- Photoluminescence
- Plasma-assisted metal-organic chemical vapor deposition
- X-ray diffraction
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
Cite this
Effects of annealing on the structure and photoluminescence of ZnO thin films. / Wang, Jinzhong; Du, Guotong; Wang, Xinqiang; Yan, Wei; Ma, Yan; Jiang, Xiuying; Yang, Shuren; Gao, Dingsan; Liu, Xiang; Cao, Hui; Xu, Junying; Chang, Robert P. H.
In: Guangxue Xuebao/Acta Optica Sinica, Vol. 22, No. 2, 02.2002, p. 178-180.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of annealing on the structure and photoluminescence of ZnO thin films
AU - Wang, Jinzhong
AU - Du, Guotong
AU - Wang, Xinqiang
AU - Yan, Wei
AU - Ma, Yan
AU - Jiang, Xiuying
AU - Yang, Shuren
AU - Gao, Dingsan
AU - Liu, Xiang
AU - Cao, Hui
AU - Xu, Junying
AU - Chang, Robert P. H.
PY - 2002/2
Y1 - 2002/2
N2 - ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.
AB - ZnO films have been grown on C-plane sapphire substrate with the plasma-assisted metal-organic chemical vapor deposition (MOCVD) method. By using the X-ray diffraction (XRD) and calculation, it is found that there is tensile strain in the sample annealed for many times during the growing process, and compressive strain in the sample which is annealed only one time after growth. The photoluminescence spectra show that there is only one emitting peak at around 380 nm for the sample annealed for many times and two speaks for the sample annealed for one time after growing.
KW - Photoluminescence
KW - Plasma-assisted metal-organic chemical vapor deposition
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0036486041&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036486041&partnerID=8YFLogxK
M3 - Article
VL - 22
SP - 178
EP - 180
JO - Guangxue Xuebao/Acta Optica Sinica
JF - Guangxue Xuebao/Acta Optica Sinica
SN - 0253-2239
IS - 2
ER -