Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors

Gilyong Chung, Chin Che Tin, John R. Williams, K. McDonald, M. Di Ventra, R. K. Chanana, S. T. Pantelides, Leonard C Feldman, R. A. Weller

Research output: Contribution to journalArticle

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Abstract

Results of room temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) metal-oxide-semiconductor capacitors annealed in ammonia following oxide layer growth using standard wet oxidation techniques. For N-SiC capacitors, both the interface state density near the conduction band edge and the effective oxide charge are substantially reduced by the ammonia anneals. For 2 h anneals, the oxide charge appears to have a minimum value for an anneal temperature of approximately 1100°C. However, for p-SiC, anneals in ammonia produce no improvement in the interface state density near the valence band edge, and the effective oxide charge is not reduced compared to samples that were not annealed. Results are compared to those reported previously for anneals in nitric oxide. Ion beam analyses of the oxide layers show substantially more nitrogen incorporation with the ammonia anneals, although for n-SiC, the decrease in Dit is comparable for both nitric oxide and ammonia anneals. Results reported here for ammonia and those reported previously for nitric oxide are the first to demonstrate that significant passivation of the interface state density near the conduction band edge in SiC can be achieved with high temperature anneals using either gas. This demonstration has important implications for SiC metal-oxide-semiconductor field effect transistor technology development.

Original languageEnglish
Pages (from-to)3601-3603
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number22
Publication statusPublished - Nov 27 2000

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metal oxide semiconductors
silicon carbides
ammonia
capacitors
traps
nitric oxide
oxides
conduction bands
p-type semiconductors
electrical measurement
passivity
field effect transistors
capacitance
ion beams
valence
nitrogen
oxidation
room temperature
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, G., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Chanana, R. K., ... Weller, R. A. (2000). Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors. Applied Physics Letters, 77(22), 3601-3603.

Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors. / Chung, Gilyong; Tin, Chin Che; Williams, John R.; McDonald, K.; Di Ventra, M.; Chanana, R. K.; Pantelides, S. T.; Feldman, Leonard C; Weller, R. A.

In: Applied Physics Letters, Vol. 77, No. 22, 27.11.2000, p. 3601-3603.

Research output: Contribution to journalArticle

Chung, G, Tin, CC, Williams, JR, McDonald, K, Di Ventra, M, Chanana, RK, Pantelides, ST, Feldman, LC & Weller, RA 2000, 'Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors', Applied Physics Letters, vol. 77, no. 22, pp. 3601-3603.
Chung, Gilyong ; Tin, Chin Che ; Williams, John R. ; McDonald, K. ; Di Ventra, M. ; Chanana, R. K. ; Pantelides, S. T. ; Feldman, Leonard C ; Weller, R. A. / Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors. In: Applied Physics Letters. 2000 ; Vol. 77, No. 22. pp. 3601-3603.
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