Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors

Gilyong Chung, Chin Che Tin, John R. Williams, K. McDonald, M. Di Ventra, R. K. Chanana, S. T. Pantelides, L. C. Feldman, R. A. Weller

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Physics & Astronomy