Effects of arylene diimide thin film growth conditions on n-channel OFET performance

Brooks A. Jones, Antonio Facchetti, Michael R Wasielewski, Tobin J Marks

Research output: Contribution to journalArticle

171 Citations (Scopus)

Abstract

A series of eight perylene diimide (PDI)- and naphthalene diimide (NDI)-based organic semiconductors was used to fabricate organic field-effect transistors (OFETs) on bare SiO2 substrates, with the substrate temperature during film deposition (Td) varied from 70-130°C. For the N.N′-n-octyl materials that form highly ordered films, the mobility (μ) and current on-off ratio [IonIoff) increase slightly from 70 to 90°C, and remain relatively constant between 90 and 130°C. IonIoff and μ of dibromo-PDI-based OFETs decrease with increasing Td, while films of N,N′-1H,1H- perfluorobutyl dicyanoperylenediimide (PDI-FCN2) exhibit dramatic IonIoff and μ enhancements with increasing T d. Increased OFET mobility can be correlated with higher levels of molecular ordering and minimization of film morphology surface irregularities. Additionally, the effects of SiO2 surface modification with trimethylsilyl and octadecyltrichlorosilyl monolayers, as well as with polystyrene, are investigated for N,N′-n-octyl dicyanoperylenediimide (PDI-8CN2) and PDI-FCN2 films deposited at Td = 130°C. The SiO2 surface treatments have modest effects on PDI-8CN2 OFET mobilities, but modulate the mobility and morphology of PDI-FCN2 films substantially. Most importantly, the surface treatments result in substantially increased Vth and decreased I off values for the dicyanoperylenediimide films relative to those grown on SiO2, resulting in Vth, > 0.0 V and I onIoff ratios as high as 108. Enhancements in current modulation for these high-mobility, air-stable, and solution-processable n-type semiconductors, should prove useful in noisemargin enhancement and further improvements in organic electronics.

Original languageEnglish
Pages (from-to)1329-1339
Number of pages11
JournalAdvanced Functional Materials
Volume18
Issue number8
DOIs
Publication statusPublished - Apr 25 2008

Fingerprint

Perylene
Organic field effect transistors
Film growth
field effect transistors
Thin films
thin films
Surface treatment
surface treatment
augmentation
Air mobility
n-type semiconductors
Semiconducting organic compounds
Polystyrenes
organic semiconductors
Substrates
Naphthalene
irregularities
naphthalene
Surface morphology
Monolayers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Cite this

Effects of arylene diimide thin film growth conditions on n-channel OFET performance. / Jones, Brooks A.; Facchetti, Antonio; Wasielewski, Michael R; Marks, Tobin J.

In: Advanced Functional Materials, Vol. 18, No. 8, 25.04.2008, p. 1329-1339.

Research output: Contribution to journalArticle

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