EFFECTS OF DOPANTS AND CRYSTAL PERFECTION ON THE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN ON SILICON BY SILICON REDUCTION OF TUNGSTEN HEXAFLUORIDE.

M. L. Green, Y. S. Ali, D. Aspnes, B. A. Davidson, Leonard C Feldman, S. Nakahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have studied the effects of implanted dopant and damage on the extent of the self-limiting reaction: 2WF//6 plus 3Si yields 2W plus 3SiF//4 ARROW UP . A strong relationship is observed which depends on both damage and dopant type. Si wafers were implanted with Si, As, P and B at energies between 25 and 200 kev and doses between 8 multiplied by 10**1**4 and 10**1**6 atoms/cm**2. Wafers doped with 10**1**6 atoms/cm**2 As, in the as-implanted condition, showed the greatest reactivity with WF//6, the W film being 450 Angstrom thick. The enhanced reactivity of this wafer is probably due to a unique aspect of its microscopic surface, such as roughness. A model, based on optical measurements of Si surfaces, and TEM observations of the W/Si interface, is presented.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherMaterials Research Soc
Pages209
Number of pages1
ISBN (Print)0931837324
Publication statusPublished - 1986

ASJC Scopus subject areas

  • Engineering(all)

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    Green, M. L., Ali, Y. S., Aspnes, D., Davidson, B. A., Feldman, L. C., & Nakahara, S. (1986). EFFECTS OF DOPANTS AND CRYSTAL PERFECTION ON THE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN ON SILICON BY SILICON REDUCTION OF TUNGSTEN HEXAFLUORIDE. In Unknown Host Publication Title (pp. 209). Materials Research Soc.