We have studied the effects of implanted dopant and damage on the extent of the self-limiting reaction: 2WF//6 plus 3Si yields 2W plus 3SiF//4 ARROW UP . A strong relationship is observed which depends on both damage and dopant type. Si wafers were implanted with Si, As, P and B at energies between 25 and 200 kev and doses between 8 multiplied by 10**1**4 and 10**1**6 atoms/cm**2. Wafers doped with 10**1**6 atoms/cm**2 As, in the as-implanted condition, showed the greatest reactivity with WF//6, the W film being 450 Angstrom thick. The enhanced reactivity of this wafer is probably due to a unique aspect of its microscopic surface, such as roughness. A model, based on optical measurements of Si surfaces, and TEM observations of the W/Si interface, is presented.
|Title of host publication||Unknown Host Publication Title|
|Publisher||Materials Research Soc|
|Number of pages||1|
|Publication status||Published - 1986|
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