Abstract
The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).
| Original language | English |
|---|---|
| Pages (from-to) | 5247-5255 |
| Number of pages | 9 |
| Journal | Physical Review B |
| Volume | 52 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1995 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.
In: Physical Review B, Vol. 52, No. 7, 1995, p. 5247-5255.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices
AU - Picozzi, S.
AU - Continenza, A.
AU - Freeman, Arthur J
PY - 1995
Y1 - 1995
N2 - The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).
AB - The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).
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U2 - 10.1103/PhysRevB.52.5247
DO - 10.1103/PhysRevB.52.5247
M3 - Article
VL - 52
SP - 5247
EP - 5255
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 7
ER -