Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).

Original languageEnglish
Pages (from-to)5247-5255
Number of pages9
JournalPhysical Review B
Volume52
Issue number7
DOIs
Publication statusPublished - 1995

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Superlattices
Electronic properties
superlattices
Energy gap
Band structure
energy bands
electronics
Charge carriers
sublattices
Lattice constants
Anions
Cations
Structural properties
charge carriers
lattice parameters
plane waves
Substitution reactions
Negative ions
Tuning
Positive ions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Physical Review B, Vol. 52, No. 7, 1995, p. 5247-5255.

Research output: Contribution to journalArticle

@article{2fae28bba84e48588f5d20ae90490f62,
title = "Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices",
abstract = "The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).",
author = "S. Picozzi and A. Continenza and Freeman, {Arthur J}",
year = "1995",
doi = "10.1103/PhysRevB.52.5247",
language = "English",
volume = "52",
pages = "5247--5255",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

TY - JOUR

T1 - Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices

AU - Picozzi, S.

AU - Continenza, A.

AU - Freeman, Arthur J

PY - 1995

Y1 - 1995

N2 - The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).

AB - The structural and electronic properties in common-anion GaSb/InSb and common-cation InAs/InSb [111] ordered superlattices have been determined using the local-density total-energy full-potential linearized augmented plane-wave method. The influence of the ordering direction, strain conditions, and atomic substitution on the electronic properties of technological and experimental interest (such as energy band gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in GaSb/InSb and 0.3 eV in InAs/InSb).

UR - http://www.scopus.com/inward/record.url?scp=0342929700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342929700&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.52.5247

DO - 10.1103/PhysRevB.52.5247

M3 - Article

AN - SCOPUS:0342929700

VL - 52

SP - 5247

EP - 5255

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

ER -