Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts

Florian Gstrein; David J. Michalak; William J. Royea; Nathan S. Lewis

doi:10.1021/jp012997d

Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts

Florian Gstrein, David J. Michalak, William J. Royea, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.

Original language	English
Pages (from-to)	2950-2961
Number of pages	12
Journal	Journal of Physical Chemistry B
Volume	106
Issue number	11
DOIs	https://doi.org/10.1021/jp012997d
Publication status	Published - Mar 21 2002

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Materials Chemistry

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title = "Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts",

abstract = "The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.",

author = "Florian Gstrein and Michalak, {David J.} and Royea, {William J.} and Lewis, {Nathan S.}",

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AU - Michalak, David J.

AU - Royea, William J.

AU - Lewis, Nathan S.

PY - 2002/3/21

Y1 - 2002/3/21

N2 - The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.

AB - The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.

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