Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts

Florian Gstrein, David J. Michalak, William J. Royea, Nathan S Lewis

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.

Original languageEnglish
Pages (from-to)2950-2961
Number of pages12
JournalJournal of Physical Chemistry B
Volume106
Issue number11
DOIs
Publication statusPublished - Mar 21 2002

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Contacts (fluid mechanics)
Liquids
liquids
Photoconductivity
decay
photoconductivity
injection
Electrons
electrons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts. / Gstrein, Florian; Michalak, David J.; Royea, William J.; Lewis, Nathan S.

In: Journal of Physical Chemistry B, Vol. 106, No. 11, 21.03.2002, p. 2950-2961.

Research output: Contribution to journalArticle

Gstrein, Florian ; Michalak, David J. ; Royea, William J. ; Lewis, Nathan S. / Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts. In: Journal of Physical Chemistry B. 2002 ; Vol. 106, No. 11. pp. 2950-2961.
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