Abstract
The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.
| Original language | English |
|---|---|
| Pages (from-to) | 2950-2961 |
| Number of pages | 12 |
| Journal | Journal of Physical Chemistry B |
| Volume | 106 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Mar 21 2002 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
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Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts. / Gstrein, Florian; Michalak, David J.; Royea, William J.; Lewis, Nathan S.
In: Journal of Physical Chemistry B, Vol. 106, No. 11, 21.03.2002, p. 2950-2961.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts
AU - Gstrein, Florian
AU - Michalak, David J.
AU - Royea, William J.
AU - Lewis, Nathan S
PY - 2002/3/21
Y1 - 2002/3/21
N2 - The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.
AB - The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.
UR - http://www.scopus.com/inward/record.url?scp=0037149783&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037149783&partnerID=8YFLogxK
U2 - 10.1021/jp012997d
DO - 10.1021/jp012997d
M3 - Article
AN - SCOPUS:0037149783
VL - 106
SP - 2950
EP - 2961
JO - Journal of Physical Chemistry B Materials
JF - Journal of Physical Chemistry B Materials
SN - 1520-6106
IS - 11
ER -