Abstract
The effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts were discussed. Carrier decay measurements were performed under both low-level injection conditions using a contactless rf photoconductivity decay apparatus. Results showed low effective surface recombination velocities due to formation of an electron accumulation layer at the Si surface.
| Original language | English |
|---|---|
| Pages (from-to) | 2950-2961 |
| Number of pages | 12 |
| Journal | Journal of Physical Chemistry B |
| Volume | 106 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Mar 21 2002 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
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Cite this
Gstrein, F., Michalak, D. J., Royea, W. J., & Lewis, N. S. (2002). Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts. Journal of Physical Chemistry B, 106(11), 2950-2961. https://doi.org/10.1021/jp012997d