Effects of metal ion chemisorption on GaAs surface recombination. Picosecond luminescence decay measurements

G. N. Ryba, C. N. Kenyon, Nathan S Lewis

Research output: Contribution to journalArticle

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Abstract

n-GaAs/KOH-Se-/2-(aq) contacts have been studied using real time photoluminescence decay techniques. This system is of interest because metal ion chemisorption improves the steady-state current-voltage properties of GaAs/KOH-Se-/2-(aq)/Pt cells, yielding 16% efficiency under simulated 1-sun illumination conditions. In this work, the luminescence decay dynamics of thin epilayer GaAs samples under high level injection conditions were monitored in contact with KOH-Se-/2-(aq) solutions. The photoluminescence signals decayed more rapidly after metal ion chemisorption than after a fresh etch, indicating that the metal ion treatment induced a more active recombination and/or charge-transfer process than the etch. A finite-difference simulation was used to model the decays and to extract a minority carrier surface recombination velocity, Smin, for these systems. For etched GaAs surfaces, Smin = 5 × 103 cm s-1 while GaAs surfaces that had been etched and then exposed to 0.010 M Co(NH3)6 3+ (pH = 11) solutions displayed Smin = 2 × 105 cm s-1. Qualitatively similar behavior was observed for Rh-, Ru-, and Os-treated GaAs surfaces as well. These data are fully consistent with prior suggestions that the primary effect of metal ion chemisorption is to increase the rate of hole transfer to the Se-/2-(aq) electrolyte, as opposed to decreasing surface recombination processes at the GaAs/liquid contact.

Original languageEnglish
Pages (from-to)13814-13819
Number of pages6
JournalJournal of Physical Chemistry
Volume97
Issue number51
Publication statusPublished - Jan 1 1993

Fingerprint

Chemisorption
chemisorption
Metal ions
Luminescence
metal ions
luminescence
decay
Contacts (fluid mechanics)
Photoluminescence
photoluminescence
Epilayers
minority carriers
Sun
suggestion
Charge transfer
sun
Lighting
illumination
Electrolytes
charge transfer

ASJC Scopus subject areas

  • Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Effects of metal ion chemisorption on GaAs surface recombination. Picosecond luminescence decay measurements. / Ryba, G. N.; Kenyon, C. N.; Lewis, Nathan S.

In: Journal of Physical Chemistry, Vol. 97, No. 51, 01.01.1993, p. 13814-13819.

Research output: Contribution to journalArticle

@article{674d2d2d35a14f4f8b42379bcae27cb5,
title = "Effects of metal ion chemisorption on GaAs surface recombination. Picosecond luminescence decay measurements",
abstract = "n-GaAs/KOH-Se-/2-(aq) contacts have been studied using real time photoluminescence decay techniques. This system is of interest because metal ion chemisorption improves the steady-state current-voltage properties of GaAs/KOH-Se-/2-(aq)/Pt cells, yielding 16{\%} efficiency under simulated 1-sun illumination conditions. In this work, the luminescence decay dynamics of thin epilayer GaAs samples under high level injection conditions were monitored in contact with KOH-Se-/2-(aq) solutions. The photoluminescence signals decayed more rapidly after metal ion chemisorption than after a fresh etch, indicating that the metal ion treatment induced a more active recombination and/or charge-transfer process than the etch. A finite-difference simulation was used to model the decays and to extract a minority carrier surface recombination velocity, Smin, for these systems. For etched GaAs surfaces, Smin = 5 × 103 cm s-1 while GaAs surfaces that had been etched and then exposed to 0.010 M Co(NH3)6 3+ (pH = 11) solutions displayed Smin = 2 × 105 cm s-1. Qualitatively similar behavior was observed for Rh-, Ru-, and Os-treated GaAs surfaces as well. These data are fully consistent with prior suggestions that the primary effect of metal ion chemisorption is to increase the rate of hole transfer to the Se-/2-(aq) electrolyte, as opposed to decreasing surface recombination processes at the GaAs/liquid contact.",
author = "Ryba, {G. N.} and Kenyon, {C. N.} and Lewis, {Nathan S}",
year = "1993",
month = "1",
day = "1",
language = "English",
volume = "97",
pages = "13814--13819",
journal = "Journal of Physical Chemistry",
issn = "0022-3654",
publisher = "American Chemical Society",
number = "51",

}

TY - JOUR

T1 - Effects of metal ion chemisorption on GaAs surface recombination. Picosecond luminescence decay measurements

AU - Ryba, G. N.

AU - Kenyon, C. N.

AU - Lewis, Nathan S

PY - 1993/1/1

Y1 - 1993/1/1

N2 - n-GaAs/KOH-Se-/2-(aq) contacts have been studied using real time photoluminescence decay techniques. This system is of interest because metal ion chemisorption improves the steady-state current-voltage properties of GaAs/KOH-Se-/2-(aq)/Pt cells, yielding 16% efficiency under simulated 1-sun illumination conditions. In this work, the luminescence decay dynamics of thin epilayer GaAs samples under high level injection conditions were monitored in contact with KOH-Se-/2-(aq) solutions. The photoluminescence signals decayed more rapidly after metal ion chemisorption than after a fresh etch, indicating that the metal ion treatment induced a more active recombination and/or charge-transfer process than the etch. A finite-difference simulation was used to model the decays and to extract a minority carrier surface recombination velocity, Smin, for these systems. For etched GaAs surfaces, Smin = 5 × 103 cm s-1 while GaAs surfaces that had been etched and then exposed to 0.010 M Co(NH3)6 3+ (pH = 11) solutions displayed Smin = 2 × 105 cm s-1. Qualitatively similar behavior was observed for Rh-, Ru-, and Os-treated GaAs surfaces as well. These data are fully consistent with prior suggestions that the primary effect of metal ion chemisorption is to increase the rate of hole transfer to the Se-/2-(aq) electrolyte, as opposed to decreasing surface recombination processes at the GaAs/liquid contact.

AB - n-GaAs/KOH-Se-/2-(aq) contacts have been studied using real time photoluminescence decay techniques. This system is of interest because metal ion chemisorption improves the steady-state current-voltage properties of GaAs/KOH-Se-/2-(aq)/Pt cells, yielding 16% efficiency under simulated 1-sun illumination conditions. In this work, the luminescence decay dynamics of thin epilayer GaAs samples under high level injection conditions were monitored in contact with KOH-Se-/2-(aq) solutions. The photoluminescence signals decayed more rapidly after metal ion chemisorption than after a fresh etch, indicating that the metal ion treatment induced a more active recombination and/or charge-transfer process than the etch. A finite-difference simulation was used to model the decays and to extract a minority carrier surface recombination velocity, Smin, for these systems. For etched GaAs surfaces, Smin = 5 × 103 cm s-1 while GaAs surfaces that had been etched and then exposed to 0.010 M Co(NH3)6 3+ (pH = 11) solutions displayed Smin = 2 × 105 cm s-1. Qualitatively similar behavior was observed for Rh-, Ru-, and Os-treated GaAs surfaces as well. These data are fully consistent with prior suggestions that the primary effect of metal ion chemisorption is to increase the rate of hole transfer to the Se-/2-(aq) electrolyte, as opposed to decreasing surface recombination processes at the GaAs/liquid contact.

UR - http://www.scopus.com/inward/record.url?scp=0027807626&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027807626&partnerID=8YFLogxK

M3 - Article

VL - 97

SP - 13814

EP - 13819

JO - Journal of Physical Chemistry

JF - Journal of Physical Chemistry

SN - 0022-3654

IS - 51

ER -