The effects of the Mg composition (x=0, 0.06, and 0.10) on the electrical characteristics and thermal stability of Mgx Zn1-x O thin film transistors (TFTs) are investigated. The Mg0.06 Zn0.94 O TFT shows the smallest subthreshold slope and highest field effect mobility. The O1s spectra of x-ray photoelectron spectroscopy measurements indicate that the oxygen vacancies are reduced in Mg0.06 Zn0.94 O relative to a pure ZnO channel device. Mg0.06 Zn0.94 O TFTs also show higher thermal stability compared to the pure ZnO TFTs, which is mainly attributed to the suppression of oxygen vacancies in the channel.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)