Effects of N incorporation on electron traps at SiO 2/SiC interfaces

A. F. Basile, S. Dhar, J. R. Williams, Leonard C Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages717-720
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Electron traps
Transistors
transistors
traps
Oxidation
Deep level transient spectroscopy
MOSFET devices
capacitance
Transport properties
oxidation
Capacitors
electrons
Capacitance
Chemical activation
Defects
capacitors
Electric potential
transport properties
trapping
activation

Keywords

  • C-V
  • DLTS
  • Electron trapping
  • Interface states
  • SiC MOS
  • Sio /SiC
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Basile, A. F., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2012). Effects of N incorporation on electron traps at SiO 2/SiC interfaces. In Materials Science Forum (Vol. 717-720, pp. 717-720). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.717

Effects of N incorporation on electron traps at SiO 2/SiC interfaces. / Basile, A. F.; Dhar, S.; Williams, J. R.; Feldman, Leonard C; Mooney, P. M.

Materials Science Forum. Vol. 717-720 2012. p. 717-720 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basile, AF, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2012, Effects of N incorporation on electron traps at SiO 2/SiC interfaces. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 717-720, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.717
Basile AF, Dhar S, Williams JR, Feldman LC, Mooney PM. Effects of N incorporation on electron traps at SiO 2/SiC interfaces. In Materials Science Forum. Vol. 717-720. 2012. p. 717-720. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.717
Basile, A. F. ; Dhar, S. ; Williams, J. R. ; Feldman, Leonard C ; Mooney, P. M. / Effects of N incorporation on electron traps at SiO 2/SiC interfaces. Materials Science Forum. Vol. 717-720 2012. pp. 717-720 (Materials Science Forum).
@inproceedings{0e01c9cf7f344416913c06fe5a5cf47f,
title = "Effects of N incorporation on electron traps at SiO 2/SiC interfaces",
abstract = "Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.",
keywords = "C-V, DLTS, Electron trapping, Interface states, SiC MOS, Sio /SiC, Tunneling",
author = "Basile, {A. F.} and S. Dhar and Williams, {J. R.} and Feldman, {Leonard C} and Mooney, {P. M.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.717",
language = "English",
isbn = "9783037854198",
volume = "717-720",
series = "Materials Science Forum",
pages = "717--720",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Effects of N incorporation on electron traps at SiO 2/SiC interfaces

AU - Basile, A. F.

AU - Dhar, S.

AU - Williams, J. R.

AU - Feldman, Leonard C

AU - Mooney, P. M.

PY - 2012

Y1 - 2012

N2 - Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.

AB - Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO 2/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.

KW - C-V

KW - DLTS

KW - Electron trapping

KW - Interface states

KW - SiC MOS

KW - Sio /SiC

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=84861365205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861365205&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.717-720.717

DO - 10.4028/www.scientific.net/MSF.717-720.717

M3 - Conference contribution

SN - 9783037854198

VL - 717-720

T3 - Materials Science Forum

SP - 717

EP - 720

BT - Materials Science Forum

ER -